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MITSUBISHI LASER DIODES
ML7XX11 SERIES
Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES
Dec. 2004
MITSUBISHI
ELECTRIC
TYPE
NAME
DESCRIPTION
ML7XX11series are DFB (Distributed Feedback) laser
diodes emitting light beam around 1310nm.
They are well suited for light source in long
distance digital transmission system.
They are hermetically sealed devices with the photo
diode for optical output monitoring.
APPLICATION
~1.25Gbps digital transmission system
FEATURES
Homogeneous grating (AR/HR facet coating) structure
DFB
Wide temperature range operation ( -40 to 85C )
Low threshold current (typical 6mA)
High speed response (typical 0.1nsec)
5.6mm TO-CAN package
Flat window cap, Ball lens cap, or Aspherical lens cap
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Conditions Ratings Unit
Po Light output power CW 10 mW
If Forward current (Laser diode) --- 150 mA
V
RL
Reverse voltage (Laser diode) --- 2 V
V
RD
Reverse voltage (Photo diode) --- 20 V
I
FD
Forward current (Photo diode) --- 2 mA
Tc Case temperature --- -40 to +85 C
Tstg Storage temperature --- -40 to +100 C
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25C otherwise specified)
[ Flat window cap : ML725B11F / ML720J11S ]
Symbol Parameter Test conditions Min. Typ. Max. Unit
CW --- 6 12 Ith Threshold current
CW, Tc=85C --- 30 40
mA
CW, Po=5mW --- 16 30 Iop Operation current
CW, Po=5mW, Tc=85C --- 50 75
mA
Vop Operating voltage CW, Po=5mW --- 1.1 1.5 V
Slope efficiency CW, Po=5mW 0.3 0.5 --- mW/mA
p Peak wavelength CW, Po=5mW 1290 1310 1330 nm
// Beam divergence angle (parallel) CW, Po=5mW --- 25 35 deg.
Beam divergence angle
(perpendicular)
CW, Po=5mW --- 30 40 deg.
SMSR Side mode suppression ratio
CW, Po=5mW
Tc= - 40 to +85C
35 40 --- dB
tr,tf Rise and Fall time Ib=Ith, 20-80% <*> --- 0.1 0.2 ns
Im Monitoring output current (PD) CW, Po=5mW 0.05 0.2 --- mA
Id Dark current (PD) V
RD
=5V --- --- 0.1 A
Ct Capacitance (PD) V
RD
=5V --- 10 20 pF
<*> Except influence of the 18mm lead.
ML725B11F/ML720J11S
ML725AA11F / ML720AA11S
ML725J11F / ML720L11S
MITSUBISHI LASER DIODES
ML7XX11 SERIES
Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES
Dec. 2004
MITSUBISHI
ELECTRIC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25C otherwise specified)
[ Ball lens cap ; ML725AA11F / ML720AA11S ]
Symbol Parameter Test conditions Min. Typ. Max. Unit
CW --- 6 12 Ith Threshold current
CW, Tc=85C --- 30 40
mA
CW, Po=5mW --- 16 30 Iop Operation current
CW, Po=5mW, Tc=85C --- 50 75
mA
Vop Operating voltage CW, Po=5mW --- 1.1 1.5 V
Slope efficiency CW, Po=5mW 0.3 0.5 --- mW/mA
p Peak wavelength CW, Po=5mW 1290 1310 1330 nm
SMSR
Side mode suppression ratio CW, Po=5mW
Tc= - 40 to +85C
35 40 --- dB
Pf Fiber coupling power CW, Po=5mW, SMF 0.5 1.0 --- mW
Df Focul length CW, Po=5mW, SMF 6.0 6.5 7.0 mm
tr,tf Rise and Fall time Ib=Ith, 20-80% <*> --- 0.1 0.2 ns
Im Monitoring output current (PD) CW, Po=5mW 0.05 0.2 --- mA
Id Dark current (PD) V
RD
=5V --- --- 0.1 A
Ct Capacitance (PD) V
RD
=5V --- 10 20 pF
<*> Except influence of the 18mm lead.
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25C otherwise specified)
[ Aspherical lens cap ; ML725J11F / ML720L11S ]
Symbol Parameter Test conditions Min. Typ. Max. Unit
CW --- 6 12 Ith Threshold current
CW, Tc=85C --- 30 40
mA
CW, Po=5mW --- 16 30 Iop Operation current
CW, Po=5mW, Tc=85C --- 50 75
mA
Vop Operating voltage CW, Po=5mW --- 1.1 1.5 V
Slope efficiency CW, Po=5mW 0.3 0.5 --- mW/mA
p Peak wavelength CW, Po=5mW 1290 1310 1330 nm
SMSR
Side mode suppression ratio CW, Po=5mW
Tc= - 40 to +85C
35 40 --- dB
Pf Fiber coupling power CW, Po=5mW, SMF 1.5 2.0 --- mW
Df Focul length CW, Po=5mW, SMF 6.5 7.5 8.5 mm
tr,tf Rise and Fall time Ib=Ith, 20-80% <*> --- 0.1 0.2 ns
Im Monitoring output current (PD) CW, Po=5mW 0.05 0.2 --- mA
Id Dark current (PD) V
RD
=5V --- --- 0.1 A
Ct Capacitance (PD) V
RD
=5V --- 10 20 pF
<*> Except influence of the 18mm lead.
MITSUBISHI LASER DIODES
ML7XX11 SERIES
Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES
Dec. 2004
MITSUBISHI
ELECTRIC
OUTLINE DRAWINGS
ML725B11F
ML720J11S
Dimension : mm
(1)
1.0Min.
2.0Min.
3.550.1
5.6
+0
-0.03
1
.
2
7
0
.
0
3
0
.
2
5
0
.
0
3
1
8
1
2
.
1
0
.
1
5
1
.
2
0
.
1
4-0.450.05
(2)
10.1
2
-
9
0
2.00.25
(P.C.D.)
4.25
(3)
(4)
(0.25)
(
0
.
2
5
)
Reference Plane
Emitting Facet
(1) (2)
(
G
l
a
s
s
)
ML720J11S
ML725B11F
Case
(1) (1) (1) (1) (2) (2) (2) (2)
(3) (3) (3) (3)
(4) (4) (4) (4)
PD
LD
Pin Connection
( Top view)
Case
(1) (1) (1) (1) (2) (2) (2) (2)
(3) (3) (3) (3)
(4) (4) (4) (4)
PD
LD
ML725AA11F
ML720AA11S
Dimension : mm
(1)
2.00.01
3.550.1
5.6 -0.03
1
.
2
7
1
8
1
3
.
8
7
0
.
1
1
.
2
4-0.450.05
(2)
10.1
2
-
9
0
2.00.25
(P.C.D.)
4.25
(3)
(4)
(0.25)
(
0
.
2
5
)
Reference Plane
Emitting Facet
(1) (2)
(
3
.
0
)
(
6
.
7
)
0
.
0
3
(Dimension:mm)
ML720AA11S
ML725AA11F
Case
(1) (1) (1) (1) (2) (2) (2) (2)
(3) (3) (3) (3)
(4) (4) (4) (4)
PD
LD
Pin Connection
( Top view)
Case
(1) (1) (1) (1) (2) (2) (2) (2)
(3) (3) (3) (3)
(4) (4) (4) (4)
PD
LD
MITSUBISHI LASER DIODES
ML7XX11 SERIES
Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES
Dec. 2004
MITSUBISHI
ELECTRIC
OUTLINE DRAWINGS
(1)
3.750.1
5.6
+0
-0.03
1
.
2
7
0
.
0
3
1
8
1
3
.
9
7
0
.
1
5
1
.
2
0
.
1
4-0.450.05
(2)
10.1
2
-
9
0
2.00.25
(P.C.D.)
4.3
(3)
(4)
(0.25)
(
0
.
2
5
)
Reference Plane
Emitting Facet
(1) (2)
Top View
(
7
.
5
1
)
ML725J11F
ML720L11S
Dimension : mm
ML720L11S
ML725J11F
Case
(1) (1) (1) (1) (2) (2) (2) (2)
(3) (3) (3) (3)
(4) (4) (4) (4)
PD
LD
Pin Connection
( Top view)
Case
(1) (1) (1) (1) (2) (2) (2) (2)
(3) (3) (3) (3)
(4) (4) (4) (4)
PD
LD
