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VLSI Fabrication Assignment Guide

1. A Czochralski crystal is pulled from a melt containing boron and phosphorus. As the crystal is pulled, more phosphorus builds up in the melt due to segregation. The crystal will transition from P-type to N-type when the phosphorus concentration exceeds the boron concentration. The question calculates the distance along the crystal where this transition occurs. 2. A Czochralski crystal is grown with an initial antimony concentration in the melt. More pure silicon is added to the melt to return it to its original volume after 80% of the melt is used. The question calculates the new antimony concentration in the crystal after 50% of the new melt

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317 views1 page

VLSI Fabrication Assignment Guide

1. A Czochralski crystal is pulled from a melt containing boron and phosphorus. As the crystal is pulled, more phosphorus builds up in the melt due to segregation. The crystal will transition from P-type to N-type when the phosphorus concentration exceeds the boron concentration. The question calculates the distance along the crystal where this transition occurs. 2. A Czochralski crystal is grown with an initial antimony concentration in the melt. More pure silicon is added to the melt to return it to its original volume after 80% of the melt is used. The question calculates the new antimony concentration in the crystal after 50% of the new melt

Uploaded by

Avinash Gupta
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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VLSI FABRICATION TECHNOLOGY

ASSIGNMENT 1

To be submitted by: 27 September 2018

Name……………………….
Roll No……………………..

Marks obtained:……………..

1. Czochralski crystal is pulled from a melt containing 1015 cm-3 boron and 2x1014 cm-3
phosphorus. Initially the crystal will be P type but as it is pulled, more and more
phosphorus will build up in the liquid because of segregation. At some point the crystal
will become N type. Assuming ko = 0.32 for phosphorus and 0.8 for boron, calculate the
distance along the pulled crystal at which the transition from P to N type takes place.

2. Czochralski crystal is grown with an initial Sb concentration in the melt of 1 x 1016 cm-3.
After 80% of the melt has been used up in pulling the crystal, pure silicon is added to
return the melt to its original volume. Growth is then resumed. What will the Sb
concentration be in the crystal after 50% of the new melt has been consumed by growth?
Assume ko = 0.02 for Sb.

3. A p-type (boron) diffusion is performed as follows:


Pre-dep: 30 minutes, 900°C, solid solubility
Drive-in: 60 minutes, 1000°C
(a) What is the deposited Q?
(b) If the substrate is doped 1 ×1015 cm−3 phosphorus, what is xJ ?
(c) What is the sheet resistance of the diffused layer?

4. A diffused region is formed by an ultra-shallow implant followed by a drive-in. The final


profile is Gaussian. Derive a simple expression for the sensitivity of xJ to the implant
dose Q. Is xJ more sensitive to Q at high or low doses?

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