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EE 3313: Device Modelling Tutorial 7: N Ox - 4 2 B

(1) Calculate the drain current (ID) for a long n-channel MOSFET with given SPICE parameters at different gate-source (VGS) and drain-source (VDS) voltages using SPICE level 1 and 3 models. (2) Calculate the saturation drain voltage (VDsat) and saturation drain current (IDsat) using different MOSFET models for a device with given parameters and plot the ID-VDS characteristics. (3) For a MOSFET with given parameters: (a) calculate the threshold voltage (Vth), (b) calculate the Vth of a scaled version using constant field scaling, (c) determine how IDmax scales if V

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56 views1 page

EE 3313: Device Modelling Tutorial 7: N Ox - 4 2 B

(1) Calculate the drain current (ID) for a long n-channel MOSFET with given SPICE parameters at different gate-source (VGS) and drain-source (VDS) voltages using SPICE level 1 and 3 models. (2) Calculate the saturation drain voltage (VDsat) and saturation drain current (IDsat) using different MOSFET models for a device with given parameters and plot the ID-VDS characteristics. (3) For a MOSFET with given parameters: (a) calculate the threshold voltage (Vth), (b) calculate the Vth of a scaled version using constant field scaling, (c) determine how IDmax scales if V

Uploaded by

Rahul Vasanth
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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EE 3313: Device Modelling

Tutorial 7

1. A long n-channel MOSFET has the following SPICE parameters: W (width) = 10 µm, L
(length) = 1.0 µm, VTO (zero bias threshold voltage) = 1 V, KP (transconductance
parameter = µnCox) = 5  10-4 A/V2, GAMMA (body effect parameter) = 0.5 V½, PHI (=
B) = 0.45 V, TOX (gate oxide thickness) = 3 nm, T (temperature) = 300 K, LAMBDA
(channel length modulation parameter) = 0.
(a) What is the drain current (ID) calculated for this MOSFET model for VGS = 2.1 V, VDS
= 1 V and VBS = 0 V from (i) from SPICE level 1 and (ii) from SPICE level 3. [Field
dependent mobility is to be ignored since saturation velocity (vsat) is not specified].
(b) What are the corresponding values when VGS = 2.1 V, VDS = 1 V and VBS = -1 V?

2. Calculate the values of VDsat and IDsat when VGS = 2V for an n-channel MOSFET with V th =
1.0 V, using (a) Level 1 model, (b) Level 3 model without taking velocity saturation into
account, (c) Level 3 model taking velocity saturation into account and (d) BSIM model,
which assumes field dependent mobility. Assume L = 1 m, Z = 5 m, tox = 20 nm, o =
ε
500 cm2/V.sec,  = 1.05 and c = 5×104 V/cm.
Plot all the ID-VDS characteristics in the same figure.

3.A MOSFET, who body is shorted to the source, is part of a circuit with power supply
voltage (VDD) of 2V. It has the following parameters:

Channel length (L) = 0.5 µm


Channel width (Z) = 2.0 µm
Substrate doping (NA) = 2  1017/cm3
Gate oxide thickness (tox) = 10 nm
Flat-band voltage (VFB) = - 0.85 V [VFB = ms and Qox = 0]

(a) Calculate the threshold voltage (Vth) of this MOSFET.

(b) This MOSFET is to be scaled down by a factor of 2 (i.e. L = 0.25 µm, etc.) using
constant field scaling laws in order to maintain long channel behavior. What is the value
of Vth for the scaled device?

(c) If VDD is also scaled by a factor of 2 as per the scaling law, by what factor would I Dmax
scale? [IDmax is the value of drain current (ID) when VGS = VDS = VDD].

(d) It is desired that the IDmax / VDD ratio of the scaled device is the same as that of the
original device. In order to achieve this, what should be the value of V DD for the scaled
device?

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