Everyday Gate Questions:
Day 1:
GATE 1988:
1. In MOSFET devices the N-channel type is better the P-channel type in the
following respects
a. it has better noise immunity
b. it is faster
c. it is TTL compatible
d. it has better drive capability
Answer:
b) It is faster
GATE 1998:
2.
Answer: © Upper 3-dB frequency
Youtube link to watch:
http://youtube.com/watch?v=1-COkXWLdJ0
3. CMOS stands for
a. Common MOS
b. Active-load switching
c. p-channel and n-channel devices
d. complementary MOS
4. Most small-signal E-MOSFETs are found in
a. Heavy-current applications
b. Discrete circuits
c. Disk drives
d. Integrated circuit
5. Channel current is reduces on application of a more positive voltage to the
GATE of the depletion mode n-channel MOSFET [GATE-1994]
(true/false)
6. Which of the following effects can be caused by a rise in temperature
[GATE-1990]
a. Increase in MOSFET current (IDS)
b. Increase in BJT current (IC)
c. Decrease in MOSFET current (IDS)
d. Decrease in BJT current (IC)
Answer:
b. Increase in BJT current (IC)
c. Decrease in MOSFET current (IDS)