Introduction to Power Electronics
Introduction to Power Electronics
Power Electronics
Chapter 1
Introduction To Power Electronics
(a) What is Power Electronics?
(b) Why do we need Power Electronics?
(c) Example applications of Power Electronics
(d) Power Computations
Vin IL Vout
RL
24 Vdc 12 Vdc
6Ω
Iz IL
Vin Vout
RL
24 Vdc 12 Vdc
6Ω
Assume Iz = 10% load current
+ Vce -
Vin IL Vout
RL
24 Vdc 12 Vdc
control 6Ω
Vo=12V
t
0 DT T
switch Therefore,
Vin Vout
IL RL
24 Vdc 12 Vdc
6Ω
Power Safety
• Safety: Power electronics is also important
for safety reasons.
• It is used in systems such as power
supplies and battery chargers to protect
against overvoltage, overcurrent, and
other types of faults that can damage the
system or create safety hazards.
Efficiency Reliability
• High energy conversion efficiency • Higher Reliability and cost effective
• Instead of directly used 50/60Hz • Less maintenance, longer lifetime,
motor-generator light and small size, fast recovery
time, unlimited range of
conversion
Clean Quiet
• Environmentally clean and safe • Quiet operation
• Produce no hazardous waste • has no moving parts, suitable for
products residential, hotels etc
• Where burning of fossil fuel emits
gases such as C,0,, CO (oil
burning), S02, NOx (coal burning)
etc. which creates global warming
(green house effect), acid rain and
urban pollution
Non-Rotating Applications
• Involves non-rotating or moving
mechanical components such as:
• DC Power supply
• Uninterruptible power supply ((UPS)
• Power generation and transmission
(HVDC)
• Electroplating
• Welding
• Heating
• Cooling
• Electronic ballast
Static
Applications
Rotating Applications
• Contains moving or rotating
components such as motors such as:
• Electric trains
• Electric vehicles
• Air-conditioning System
• Pumps
• Compressor
• Conveyer Belt (Factory automation)
Rotating
Applications
Average Power
• is the time average of p(t) over
one or more periods
1 𝑡0+𝑇
P = 𝑡0 𝑝(𝑡) 𝑑𝑡
𝑇
• sometimes called real power or
active power
1 𝑇
computing from equation before: P = 0 𝑝(𝑡) 𝑑𝑡
𝑇
1 𝑇 𝑉2 1 𝑇
P = 0 𝑑𝑡 we should get 𝑉𝑟𝑚𝑠 = 𝑣 2 (𝑡) 𝑑𝑡
𝑇 𝑅 𝑇 0
• The ratings of devices such as transformers etc. are always in rms voltages and currents
• Electro-mechanical switches
• Semiconductor switches
Types of
Switches
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Power Semiconductor Devices
(Power Switches)
Can be categorized into 3 groups
• In ON STATE
• No limit on the amount of current in conduction
• Zero on-state voltage drop
• In OFF STATE
• No limit on the amount of voltage in-non conduction
• Zero leakage current
• In STATE changes
• No limit on the operating speed
Ideal • Zero rise time
• In ON STATE
• Limited power handling capabilities
• The existence of forward voltage drop
• In OFF STATE
• Limited amount of voltage blocking capabilities
• The existence of reverse current flow (leakage)
• In STATE changes
• Limited switching speed
• In ON STATE
• Limited power handling capabilities
• The existence of forward voltage drop
• In OFF STATE
• Limited amount of voltage blocking capabilities
• The existence of reverse current flow (leakage)
• In STATE changes
• Limited switching speed
• In ON STATE
• Diode is forward biased, current flows with a small forward voltage
(Vf) of 0.2- 3 V
• In OFF STATE
• Diode is reverse biased (or in blocking state), a small leakage
current flows (in uA to mA) until the reverse breakdown occurs.
• Diode should not be operated at reverse voltage greater than Vr.
Power
Diodes
Presentation title 20XX 40
Practical Diodes (Reverse Recovery)
• In STATE Changes
• When a diode is quickly switched from forward to reverse bias, it
continues to conduct due to minority carriers which remains in the
PN junction.
• The minority carriers require finite time to recombine with
opposite charge and neutralized i.e. Reverse recovery time (trr).
• The reverse recovery time, trr effects are i.e. increase switching
losses, increase voltage rating, and causes over-voltage (spikes) in
inductive loads.
Power
Diodes
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Types of Power Diodes
Power
Diodes
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Types of Power Diodes Comparison
Power
Diodes
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Practical Devices
- Thyristors
SEMI-CONTROLLED SWITCH
Thyristors
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Silicon-Controlled Rectifier (SCR)
• The SCR can be turned ON either by applying forward blocking voltage, Vf or
the gate current, Ig.
• The forward breakover voltage, VBO is the voltage across anode-cathode
terminal that allows the SCR to turn ON in the absence of gate current.
• The holding current, IH is the minimum forward current for an SCR to stay in ON
state.
SCR
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Silicon-Controlled Rectifier (SCR)
• To turn ON
• The SCR in forward blocking state (Vak is positive)
or
• A positive gate current (Ig) is applied at the gate
• Once conducting, the anode current is latched
• The SCR cannot be turn OFF by gate control.
SCR
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How to turn OFF an SCR?
• Thyristor can be turned off by
• Natural Commutation – when the supply goes negative (or
polarity changes in ac)
• Forced commutation – when the anode current goes zero (
by diverting the anode current
SCR
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Controllable Switches
• Disadvantages
• Current-controlled device
• Low current gain,
• Require high base current, Ib to obtain reasonable output, Ic
• Expensive and complex base-drive circuit
• Not popular in new products
Power
BJTs
Presentation title 20XX 54
BJT Conduction
• (a) at Cut-off
• Vce is high R=
• Collector Current, Ic is very low
• (b) at Saturation
• Collector Current, Ic is high
• Vce is very low
• The BJT as a resistor
Power R=0
BJTs
Presentation title 20XX 55
Practical Devices
- MOSFETs
FULLY -CONTROLLED SWITCH
• Ratings
• Voltage: Vds <500V; Current: Ids < 300A
• Switching frequency: fsw >100kHz up to MHz range for low power devices
• Advantages
• voltage-controlled device
• Gate-drive circuit is simple (+- 15V VGS)
• Low voltage device <600V with limited current capability
• Popular in new products
Power
MOSFETs
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MOSFET Conduction
During ON state
• Internal (dynamic) resistance between drain and source during
ON state, Rds(on) limits the power handling capability of mosfet.
• Conduction loss caused by the on resistance of the drain-source
channel, Rds(on)
Power
MOSFETs Switching losses occurs during both switch-
ON and switch-OFF caused by MOSFET’s
parasitic parameters
Presentation title 58
Practical Devices
- IGBTs
FULLY -CONTROLLED SWITCH
• Disadvantages
• Voltage-controlled device
• Good for medium to high power applications
• Simple base-drive circuit
• Very popular in new products
IGBTs
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R=
IGBT Conduction
R=0
IGBTs
Presentation title 20XX 61
Practical Devices
- GTOs
FULLY -CONTROLLED SWITCH
• Disadvantages
• Behave like scr but can be turned off using gate signal
• Turning off is difficult (requires very large reverse current; 1/5 of Ia)
• Expensive and difficult base-drive circuit
• Limited in very high power applications
GTO
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Practical Devices
- IGCTs
FULLY -CONTROLLED SWITCH
• Ratings
• Voltage: Vak <6.5kV; Current: Ia < 5kA
• Switching frequency: fsw <1kHz; on-state voltage: Vce(sat) 1-2V
• Disadvantages
• Behave like GTO but with higher power ratings and lower fswitching
• Turning off is difficult (requires very large reverse current; >1/5 of Ia)
• Expensive and difficult base-drive circuit
• Limited to very high-power applications
IGCT
Presentation title 20XX 65
Switch Applications
SCR Early 60s 5kV 4kA NA 2V Simple Mature Cannot turn-off using gate signal
BJT Late 70s 1kV 400A 5kHz 1-2V Difficult Mature Phasing out in new products
Mature/
MOSFET Early 80s 500V 200A 1MHz I*Rds(on) Very Simple Good in high frequency
improving
GTO Mid 80s 5kV 5kA 2kHz 2-3V Very Difficult Mature King in high power
Rapid
IGBT Late 80s 3.3kV 1.2kA 100kHz 2-3V Very Simple Best overall performance
Improve
IGCT Mid 90s 6.5kV 4kA 1kHz 3V Simple Improving Replacing GTO
PE Basic
Conversions
Presentation title 20XX 71
Power Electronics Converters
For the following application, choose the best power switches and
justify your answer.
For the following application, choose the best power switches and
justify your answer.
For the following application, choose the best power switches and
justify your answer.
End of Chapter 1
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