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Analog Electronics Tutorial Guide

This document contains a tutorial for an analog electronics course, including: (1) A fill-in-the-blank worksheet covering key concepts like atoms, semiconductors, diodes, and conduction. (2) Questions asking students to describe forward and reverse bias of diodes, including sketches of connection diagrams and characteristic curves. Forward bias causes a silicon diode's barrier potential of around 0.7V, while reverse breakdown voltage is typically higher. (3) No answers are provided, suggesting this is for students to complete as part of their tutorial. The document gives an overview of topics and exercises covering fundamental electronics and semiconductor physics concepts.

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Htwe Aung Myint
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13 views2 pages

Analog Electronics Tutorial Guide

This document contains a tutorial for an analog electronics course, including: (1) A fill-in-the-blank worksheet covering key concepts like atoms, semiconductors, diodes, and conduction. (2) Questions asking students to describe forward and reverse bias of diodes, including sketches of connection diagrams and characteristic curves. Forward bias causes a silicon diode's barrier potential of around 0.7V, while reverse breakdown voltage is typically higher. (3) No answers are provided, suggesting this is for students to complete as part of their tutorial. The document gives an overview of topics and exercises covering fundamental electronics and semiconductor physics concepts.

Uploaded by

Htwe Aung Myint
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Nationalities Youth Resource Development Degree College, Sagaing

Technological Department
Department of Electronic Engineering
Tutorial I
A.G.T.I Year II (Electronics) Date: 1.1.2024
EcE-21021 Analog Electronics Time: 8:00AM to 10:15AM
1. Fill in the blanks.

(a)
.......... is the smallest particle of an element that possesses the unique characteristics of that element.
(b)
Conductor is a material that easily ……… electrical current.
(c) The ………. carrier in an n-type semiconductor is the free electron.

(d) ………. is an energy band in which electrons orbit the nucleus of an atom.

(e) Covalent bonds are formed by the sharing of ………. electrons with neighboring atoms.

(f) The barrier potential for a germanium diode is approximately ……….V.

(g) A valence electron is an electron in the ………. shell of an atom.

(h) The process of adding an impurity to an intrinsic semiconductor is called ………..

(i) A ………. is the boundary between p-type and n-type semiconductor in a diode.

(j) Free electrons are in the ………. band.

(k) An electron is the basic particle of ………. electrical charge.

(l) …………is a material that does not normally conduct current.

(m) Free electrons are responsible for ………. in a material.

(n) An ………. material is one that is in a pure state.

(o) Semiconductors have ………. valence electrons.

(p) The depletion region for forward bias is much ………. than for reverse bias.

(q) ………. is the absence of an electron in the valence band of an atom.

(r) Free electrons are in the ………. band.

(s) Conductors such as copper have ………. valence electron.

(t) The majority carrier in a p-type semiconductor is the ………..


2. (a) Describe forward bias of a diode and sketch the forward-bias connection of a diode.

(b) What is the typical value of the barrier potential for a silicon diode? Draw the V-I characteristic
curve for forward biased diode.

(c) Describe reverse bias of a diode and sketch the reverse-bias connection of a diode.

(d) What is the reverse breakdown voltage for a silicon diode? Draw the V-I characteristic curve for
a reverse biased diode.

*************** End of Questions***************

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