,
NATIONAL INSTITUTE OF TECHNOLOGY SIKKIM
Ravangla Campus
Programme: B.Tech. Year: 1st
Subject: Engineering Physics Subject code: PH11101
Paper: Engineering Physics ASSIGNMENT:3
1. Two semiconductor materials have exactly the same properties except material A has a bandgap energy of
0.90 eV and material B has a bandgap energy of 1.10 eV. Determine the ratio of ni of material B to that of
material A for T “ 300K.
2. The maximum intrinsic carrier concentration in a silicon device must be limited to 5 ˆ 1013 cm´3 . Assume
Eg “ 1.12 eV. Determine the maximum temperature allowed for the device.
` T ˘2
3. In a particular semiconductor material, the effective density of states functions are given by Nc “ Nc0 300
` T ˘2
and Nv “ Nv0 300 where Nc0 and Nv0 are constants independent of temperature. Experimentally de-
termined intrinsic carrier concentrations are found to be ni “ 1.40 ˆ 1010 cm´3 at T “ 200K and ni “
7.70 ˆ 1010 cm´3 at T “ 400K. Determine the product Nc0 ˆ Nv0 and the bandgap energy Eg . (Assume Eg
is constant over this temperature range.)
4. Calculate EF with respect to the center of the bandgap in silicon for T “ 300 K.
5. Calculate the ionization energy and radius of the donor electron in germanium using the Bohr theory.
6. Assume that EF ´ Ev “ 0.20eV in silicon. Plot npT q “ gpEqfi pEqdE over the range Ev ď E ď Ec ` 0.10 eV
for T “ 300K.
7. Silicon at T “ 300 K is doped with arsenic atoms such that the concentration of electrons is n “ 7ˆ1015 cm´3 .
(a) Find Ec ´ EF . (b) Determine EF ´ Ev . (c) Calculate po . (d) Which carrier is the minority carrier? (e)
Find EF ´ Eintrinsic .
8. The value of po in silicon at T “ 300K is 2 ˆ 1016 cm´3 . (a) Determine EF ´ Ev . (b) Calculate the value of
Ec ´ EF . (c) What is the value of no ? (d) Determine EF ´ Eintrinsic .
9. Assume that EF “ Ev ` kT {2 at T “ 300K in silicon. Determine no .
10. Consider silicon at T “ 300K in which the hole concentration is po “ 5 ˆ 1019 cm´3 . Determine Ec ´ EF .
11. Consider a germanium semiconductor at T “ 300K. Calculate the thermal equilibrium electron and hole
concentrations for (i) Nc “ 2 ˆ 1015 cm´3 , Nv “ 0, and (ii) Nc “ 1016 cm´3 , Nv “ 7 ˆ 1015 cm´3 .
12. A silicon semiconductor material at T “ 300K is doped with arsenic atoms to a concentration of 2 ˆ 1015 cm´3
and with boron atoms to a concentration of 1.2ˆ1015 cm´3 . (a) Is the material n type or p type? (b) Determine
no and po . (c) Additional boron atoms are to be added such that the hole concentration is 4 ˆ 1015 cm´3 .
What concentration of boron atoms must be added and what is the new value of no ?
13. The thermal equilibrium hole concentration in silicon at T “ 300K is po “ 2 ˆ 1016 cm´3 . Determine the
thermal-equilibrium electron concentration. Is the material n type or p type?
14. In a germanium sample at T “ 250K, it is found that po “ 4no and that Na “ 0. Determine po , no , and Nd .
15. A particular semiconductor material is doped at Nd “ 2 ˆ 1014 cm´3 and Na “ 1.2 ˆ 1014 cm´3 . The thermal
equilibrium electron concentration is found to be no “ 1.1 ˆ 1014 cm´3 . Assuming complete ionization,
determine the intrinsic carrier concentration and the thermal equilibrium hole concentration.
16. Consider germanium with an acceptor concentration of Na “ 1015 cm´3 and a donor concentration of Nd “ 0.
Consider temperatures of T “ 200, 400, and 600K. Calculate the position of the Fermi energy with respect
to the intrinsic Fermi level at these temperatures.
17. Silicon is doped with acceptor impurity atoms at a concentration of Na “ 3ˆ1015 cm´3 . Assume Nd “ 0. Plot
the position of the Fermi energy level with respect to the intrinsic Fermi energy level over the temperature
range of 200 ď T ď 600K.
18. Silicon at T “ 300K contains acceptor atoms at a concentration of Na “ 5ˆ1015 cm´3 . Donor atoms are added
forming an n-type compensated semiconductor such that the Fermi level is 0.215eV below the conduction-band
edge. What concentration of donor atoms are added? 1
19. Determine the position of the Fermi energy level with respect to the intrinsic Fermi level in silicon at T “ 300K
that is doped with boron atoms at a concentration of Na “ 2 ˆ 1016 cm´3 . Also calculate no and po .
20. Determine the values of no and po in GaAs at T “ 300K if EF ´ Ev “ 0.25eV. If the value of po remains
constant, determine the values of EF ´ Ev and no at T “ 400K.
