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2N741 Motorola | PDF | Bipolar Junction Transistor | Amplifier
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2N741 Motorola

The document provides specifications for PNP germanium mesa transistors (2N741 and 2N741A) used in oscillator, frequency multiplier, and amplifier applications. It details maximum ratings, electrical characteristics, and performance metrics such as power output and gain at various frequencies. The transistors are designed for high reliability with specific voltage and current ratings outlined for optimal operation.

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Jose Luis M.P.
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© © All Rights Reserved
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0% found this document useful (0 votes)
48 views2 pages

2N741 Motorola

The document provides specifications for PNP germanium mesa transistors (2N741 and 2N741A) used in oscillator, frequency multiplier, and amplifier applications. It details maximum ratings, electrical characteristics, and performance metrics such as power output and gain at various frequencies. The transistors are designed for high reliability with specific voltage and current ratings outlined for optimal operation.

Uploaded by

Jose Luis M.P.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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2N7 41, A (GERMANIUM)

PNP germanium mesa transistors for oscillator,


frequency multiplier and amplifier applications.

CASE 22
(TO-IS)

Collactor connectad to elsa

MAXIMUM RATINGS

Rating Symbol 2N741 2N741A Unit

Collector-Emitter Voltage VCE 15 20 Vdc

Collector-Base Voltage VCB 15 20 Vdc

Emitter-Base Voltage VEB 1.0 Vdc

Collector Current IC 100 mAdc

Total Device Dissipation @ T A = 25°C Po 150 mW


Derate above 25°C 2.0 mw;oC

Total Device Dissipation @ TC =' 25°C Po 300 mW


Derate above 25°C 4.0 mW/oC

Operating and Storage Junction


Temperature Range TJ,T stg -65 to +100 °c

POWER OUTPUT versus FREQUENCY, POWER GAIN AND COMMON EMITTER CURRENT GAIN
CLASS C AMPLIFIER versus FREQUENCY

500 28

II,
LIMITED DUTY CYCLE
II
400

300
---- - -- . .
NOTE: DC power input
is 800 to 1000 Milliwatts

~
24

20 "'I"" ~OWER
~
AIN

I
~ 16
,
,, ~ 1 ~
200 - HIGH ReliABILITY MAX z .12 Vel = -6Vde

i'-..\
;j
8.0
I, - 5 mAde ~
100
! '\:
~ 4.0
o
10 20 30 40 50 60 80 100 200 300 o
I~
I Z.o 4.0 6.0 10 20 40 60 100 200 400 1000
FREQUENCY (MH'i
FREQUENCY ( MH'i

2-92
2N741,A (continued)
ELECTRICAL CHARACTER ISTICS (TA = 250 C unless otherwise noted)

Characteristic
ON CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO Vdc
~ = 100 "Adc, IE =0) 2N741 15 - -
2N741A 20 - -
Emitter-Base Breakdown Voltage BVEBO Vde
OE =100 ,.Adc, IC =0) 1.0 - -
Collector Cutoff Current ICES "Ade
(VCE = 15 Vdc, VBE = 0) 2N741 - - 100
(VCE =20 Vde, VBE = 0) 2N741A - - 100

Collector Cutoff Current ICBO /.LAde


(V CB == 6 Vdc, IE = 0) - 0.2 3.0

ON CHARACTERISTICS

IDC Current Gain


(IC =5 mAde, VCE =6 Vde) 10 25

SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product fT MHz
(IE =5 mAde, VCB = 6 Vde, f = 100 MHz) 2N741
2N741A
-
300
360
360 --
Output Capacitance Cob pF
(VCB =6 Vde, IE = 0, f = 100 kHz) - 6.0 10

Collector Capacitance Ce pF
(VCB =6 Vde, IE = 0, f =100 kHz) - 3.0 -
Small-Signal Current Gain hfe -
(IC = 5 mAde, VCE =6 Vdc, f = 1 kHz) 20 - -
Output Admittance hob "mhos
(IE =5 mAde, VCB " 6 Vdc, f =1 kHz) - 45 -
Input Impedance hib Ohms
(IE =5 mAde, VCB =6 Vde, f =1 kHz) - 8.0 15

Base Resistance r'b Ohms


(IE = 5 mAde, VCB =6 Vde, f = 300 MHz) 2N741 -- 75 -
2N741A 65 -
Noise Figure NF dB
(IE =5 mAde, VCB = 6 Vdc, f =30 MHz) - 7.0 -
Power Gain, Matched, Neutralized Gpe dB
(VCB = 6 Vdc, IE =5 mAde, f = 30 MHz) 16 22 -
Power Output Pout mW
~ = 60 mAde, VCB = 6 Vdc, - 200 -
Gpe= B dB, f = 30 MHz) - 250 -
Power Output Pout mW
(IC = 60 mAde, VCB = 6 Vde, - 200 -
Gpe= 5 dB, f = 70 MHz)

2-93

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