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FET Problem and Solution

The document presents various problems and solutions related to Junction Field Effect Transistors (JFETs), including calculations for drain current, gate-source resistance, transconductance, and biasing requirements. Each problem is accompanied by specific parameters and equations necessary for solving them. The document also references figures that illustrate the circuits and characteristics of the JFETs discussed.

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Ken Daniel Cadapan
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46 views6 pages

FET Problem and Solution

The document presents various problems and solutions related to Junction Field Effect Transistors (JFETs), including calculations for drain current, gate-source resistance, transconductance, and biasing requirements. Each problem is accompanied by specific parameters and equations necessary for solving them. The document also references figures that illustrate the circuits and characteristics of the JFETs discussed.

Uploaded by

Ken Daniel Cadapan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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FET Problem and Solution

1. A JFET has the following parameters: IDSS = 32 mA ; VGS (off) = – 8V ; VGS = – 4.5 V. Find the value of drain
current.
Solution:

2. A JFET has a drain current of 5 mA. If IDSS = 10 mA and VGS (off) = – 6 V, find the value of (i) VGS and (ii) VP.

3. Fig. 1 shows the transfer characteristic curve of a JFET. Write the equation for drain current.

Figure 1

Solution: Referring to the transfer characteristic curve in Fig. 1, we have,

4. For the JFET in Fig. 2, VGS (off) = – 4V and IDSS = 12 mA. Determine the minimum value of VDD required to put
the device in the constant-current region of operation.
Figure 2

5. Determine the value of drain current for the circuit shown in Fig. 3.

Figure 3

Solution: It is clear from Fig. 3 that VGS = – 2V. The drain current for the circuit is given by;

6. When a reverse gate voltage of 15 V is applied to a JFET, the gate current is 10−3 μA. Find the resistance
between gate and source.
Solution:
7. When VGS of JFET changes from –3.1 V to –3 V, the drain current changes from 1 mA to 1.3 mA. What is
the value of transconductance?

8. A JFET has a value of gmo = 4000 μS. Determine the value of gm at VGS = – 3V. Given that VGS (off) = – 8V.

9. The datasheet of a JFET gives the following information: IDSS = 3 mA, VGS (off) = – 6V and gm (max) = 5000 μS.
Determine the transconductance for VGS = – 4V and find drain current ID at this point.

10. A JFET in Fig. 4 has values of VGS (off) = – 8V and IDSS = 16 mA. Determine the values of VGS, ID and VDS for
the circuit.

Figure 4

Solution: Since there is no gate current, there will be no voltage drop across RG.
11. Find VDS and VGS in Fig. 5, given that ID = 5 mA.

Figure 5

12. Determine the value of RS required to self-bias a p-channel JFET with IDSS = 25 mA, VGS (off) = 15 V and VGS
= 5V.
Solution:

13. The transfer characteristic of a JFET reveals that when VGS = – 5V, ID = 6.25 mA. Determine the value of RS
required.
Solution:

14. Select resistor values in Fig. 6 to set up an approximate midpoint bias. The JFET parameters are : IDSS =
15 mA and VGS (off) = – 8V. The voltage VD should be 6V (one-half of VDD).
Figure 6

15. In a self-bias n-channel JFET, the operating point is to be set at ID = 1.5 mA and VDS =10 V. The JFET
parameters are IDSS = 5 mA and VGS (off) = − 2 V. Find the values of RS and RD. Given that VDD = 20 V.
Solution: Fig. 7 shows the circuit arrangement.

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