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Experiment Name

The document outlines an experiment on the I-V characteristics of diodes, detailing the objectives, theory, and equipment used. It explains the behavior of diodes under forward and reverse bias conditions, presents experimental data, and discusses the results and conclusions drawn from the observations. The experiment demonstrates the exponential nature of the current increase after a certain voltage threshold is reached.

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0% found this document useful (0 votes)
20 views5 pages

Experiment Name

The document outlines an experiment on the I-V characteristics of diodes, detailing the objectives, theory, and equipment used. It explains the behavior of diodes under forward and reverse bias conditions, presents experimental data, and discusses the results and conclusions drawn from the observations. The experiment demonstrates the exponential nature of the current increase after a certain voltage threshold is reached.

Uploaded by

towhidevan24
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Experiment Name:

I-V Characteristics of Diode.


Objectives:
 Study the I-V characteristics of a diode
Theory:
Diode is a bi-polar electronic device that acts as a short circuit when it is connected to a
circuit in forward bias but as an open circuit when it is in reverse bias condition. Diodes are
primarily made of Silicon (Si), Germanium (Ge).
Symbol of a diode is given in Figure 1.1 and Appearance is given on Figure 1.2 and
Figure 1.3.

Figure 1.3: Physical Appearance of a diode. Source: https://binaryupdates.com/what-are-


different-types-of-diode/
Some commonly used diodes are:
1. Junction Diode
2. Zener Diode
3. Tunnel Diode
4. Schottky Diode
5. Varactor Diode
6. Diac Diode
7. SCR Diode
8. Light Emitting Diode
9. Photodiode
There are two types of biasing condition for a diode:
1. Forward bias: If the diode is connected across a voltage source with positive polarity of
source connected to P side of diode and negative polarity to N side.
2. Reverse Bias: If the diode is connected across a voltage source with positive polarity of
source connected to N side of diode and negative polarity to P side.

Source: Given Lab Manual – 01 for Experiment 01.

If the input voltage is varied and the current through the diode corresponding to each voltage are
taken, the plot of diode current (Id) VS diode voltage (VD) will be follows:

Source: Given Lab Manual – 01 for Experiment 01.

Load Line Analysis:


Applying KVL on the circuit from Section: Circuit design,
For VDC = 3V, R = 0.989 kΩ
VDC =VR+VD = IR* R+VD
Now, if VD = 0 and
IR = VDC /R = (3/0.989) mA=3.03 mA or 3 mA (approximately)
Similarly, if IR = 0,
VDC =VD = 3V
So, the load line passes through (0, 3) and (3, 0) on the graph, where Q = 0.52 (from the graph)
Equipment List:
Serial NO. Components Specification Quantity
1. Diode N4007 1 piece
2. Resistor 1kΩ 1 piece
3. DC Power Supply 1 unit
4. Digital Multimeter 1 unit
5. Bread Board 1 unit
6. Wires 2

Circuit Diagram:

Figure 2.1: Circuit Diagram of the experiment. Source: Lab Manual for Experiment 01
Figure:1.6
Data, Results and Graph:
VDC (V) VR (V) VD (V) ID (Experimental) (mA)
0.1 0 0.088 0
0.2 0 0.251 0
0.3 0.001 0.303 0.001
0.4 0.046 0.407 0.046
0.5 0.113 0.433 0.114
0.6 0.216 0.452 0.218
0.7 0.281 0.460 0.284
0.8 0.383 0.469 0.387
0.9 0.463 0.475 0.468
1.0 0.572 0.481 0.578
1.2 0.785 0.491 0.793
1.4 0.950 0.497 0.960
1.6 1.138 0.502 1.150
1.8 1.309 0.506 1.323
2.0 1.480 0.507 1.496
3.0 2.468 0.528 2.495
4.0 3.506 0.541 3.544
5.0 4.494 0.548 4.543
Table 1: Experimental Data.

Figure 3.1: Graph of our Table. 1. Horizontal Axis represents VD (V), and the Vertical axis
represents ID (mA).
Calculation:
Equiation. 1: ID = VR /R
Plugging values for Eq. 1,
For, VDC = 0.1 V, VR = 0 V, R = 0.989 k ohm, ID = (0/0.989) mA = 0.0 mA
For, VDC = 0.2 V, VR = 0 V, R = 0.989 k ohm, ID = (0/0.989) mA = 0.0 mA
For, VDC = 0.3 V, VR = 0.001 V, R = 0.989 k ohm, ID = (0.001/0.989) mA = 0.001 mA
For, VDC = 0.4 V, VR = 0.046 V, R = 0.989 k ohm, ID = (0.046/0.989) mA = 0.047 mA
For, VDC = 0.5 V, VR = 0.113 V, R = 0.989 k ohm, ID = (0.113/0.989) mA = 0.114 mA
For, VDC = 0.6 V, VR = 0.216 V, R = 0.989 k ohm, ID = (0.216/0.989) mA = 0.218 mA
For, VDC = 0.7 V, VR = 0.281 V, R = 0.989 k ohm, ID = (0.281/0.989) mA = 0.284 mA
For, VDC = 0.8 V, VR = 0.383 V, R = 0.989 k ohm, ID = (0.383/0.989) mA = 0.387 mA
For, VDC = 0.9 V, VR = 0.463 V, R = 0.989 k ohm, ID = (0.463/0.989) mA = 0.468 mA
For, VDC = 1.0 V, VR = 0.572 V, R = 0.989 k ohm, ID = (0.572/0.989) mA = 0.578 mA
For, VDC = 1.2 V, VR = 0.785 V, R = 0.989 k ohm, ID = (0.785/0.989) mA = 0.794 mA
For, VDC = 1.4 V, VR = 0.950 V, R = 0.989 k ohm, ID = (0.950/0.989) mA = 0.960 mA
For, VDC = 1.6 V, VR = 1.138 V, R = 0.989 k ohm, ID = (1.138/0.989) mA = 1.150 mA
For, VDC = 1.8 V, VR = 1.309 V, R = 0.989 k ohm, ID = (1.309/0.989) mA = 1.323 mA
For, VDC = 2.0 V, VR = 1.480 V, R = 0.989 k ohm, ID = (1.480/0.989) mA = 1.496 mA
For, VDC = 3.0 V, VR = 2.468 V, R = 0.989 k ohm, ID = (2.468/0.989) mA = 2.495 mA
For, VDC = 4.0 V, VR = 3.506 V, R = 0.989 k ohm, ID = (3.506/0.989) mA = 3.544 mA
For, VDC = 5.0 V, VR = 4.494 V, R = 0.989 k ohm, ID = (4.494/0.989) mA = 4.543 mA
Discussion: On our experiment, we have used the diode in forward bias condition. From the
observation of the experimental data, it is observed that before applying VDC =0.5 V, the IR was
close to 0 but after reaching that point, the IR started to increase, which according to our test VT =
0.490 V of diode, proves to be correct.
Also, the curve of I-V of the diode also behaves like an exponential function which it
should be. After the threshold is crossed, the current rose at an exponential rate.

Conclusion:
From this experiment we learnt the I-V characteristics of the diodes, different types of
diodes and why and how a diode behaves when attached to a circuit and voltage is applied.

References:
1. Boylestad, R. and Nashelsky, L. (2009) Electronic Devices and Circuit Theory.
Pearson-/Prentice Hall.

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