PARUL INSTITUTE OF ENGINEERING AND TECHNOLOGY

EC DEPARTMENT

Basic Electronics
Ch:1 Semiconductor and Diode Theory:

2. Define Mobility ,give its dimensions

3. . Define conductivity ,give its dimensions
4. define hole
5. indicate pictorically how a hole contributes in conduction
6. Define intrinsinc concentration of holes
(a) what is relation ship between density and intrinsinc concentration
(b) what do these equal at 0 deg K
7. show the crystal structure of silicon containing donor impurity atom
8. show the crystal structure of silicon containing acceptor impurity atom
9. A semiconductor is doped with both donor and acceptor concentration ND , NA Write equation
from which to determine electron and hole concentration
10. Define volt equivalent of temperature what is its value at room temperature
11. Define Donor , acceptor impurities
12. Describe Hall effect
13. What properties of semiconductor are determined by Hall effect. Expalin how mobility and
conductivity can be determined using Hall effect.
14. Given an intrinsic semiconductor specimen ,state two physical process for increasing its
conductivity.
15. Is temperature coefficient of resistance of a semiconductor positive or negative ? Explain briefly
16. Is temperature coefficient of resistance of a metal positive or negative ? Explain briefly
Questions asked in Other University
1. Define the following : (i) Mobility ofcharge carriers (ii) Voltage equivalent of temperature
2. Expalin the Hall effect. Derive the expression of Hall voltage and stte its applications
3. A abr of n type Silicon has 5cm length and circular crosssection of 10 mm2. When it is
subjected to a voltage of 1V along its length , the current flowing is 5MA. Calculate the
concentration of free electrons and drift velocity of electrons. Assume mobility of free
electrons to be 1300 cm2/V-s.
Soln:Assume charge of electon – 1.6 x 10 -19 C
Given l=5 cm A= 10 mm2 V I= 5 mA Mobility = 1300 cm2/V-s V=1 v
J = nqμε
J=I/A = 1/10x 10-6 = 100 A/m2
E=V/l
E= 1/5x 10-2 = 20 V/m
J = nqμε

100 = n x 1.6 x10-19 x1300x10-4x20

N= ?

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4. Define
(a) Critical wavelength for Semiconductor (b) Mean life time of carrier
5. Prove that current density is proportional to product of cahrgecdensity , mobility of
(ii)
charge and electric field intensity
6. Expalin hall effect in semiconductor. How hall effect is used to measure mobility
and conductivity

Ch : 2 Circuits using PN Junction Diode:

1. Compare zener and avalanche break down. (4 mks) , Describe two breakdown mechanisms
in a P-N junction diode.
2. Define Reverrse Recovery time for Diode
3. Draw diode I-V characteristic and explain diode static and dynamic resistances.
4. What is diffusion capacitance in p-n junction diode? Give its physical significance. (5 mks-
imp)
5. Explain principle of operation of a Photodiode. (4 mks)
6. Discuss piece-wise linear model of a diode.( 5mks)
7. Compare V-I characteristics of Silicon and Germanium p-n junction diode. ( 5 mks)
8. State the mass-action law as an equation and in word.
9. (vi) What is cutin voltage? Write approx. value of cutin voltage for silicon
and germanium diode
10. Write the equation for the volt-ampere characteristic a photo diode
11. Draw symbol and explain briefly the working principle Breakdown diode and Tunnel diode
(04mks)
12. Write principle and applications of light emitting diode (03 mks)
13. Compare zener and avalanche break down.(04 mks)
14. Explain principle of operation of a Photodiode. (04 mks)
15. Compare V-I characteristics of Silicon and Germanium p-n junction diode. (05mks)
16. Draw symbol of tunnel diode, Draw VI characteristic of tunnel diode and explain it.
17. Explain how Zener diode regulates voltage.
18. What is transition capacitance of a p- n junction diode ? For a step graded junction prove that
the expression for the transition capacitance of a diode is same as the capacitance of a
parallel plate capacitor.
19. Give minimum four comparisons of following semiconductor devices
(1) Tunnel diode with conventional diode.
(2) LED with conventional diode.
(3) LED with photo diode.
20. A static resistance of 4 ohm is observed in an ideal germanium diode at room temperature.
The current flowing through the diode is 50mA. If the forward
biased voltage is 0.2V , volt equivalent temperature is 26mV , calculate :
(i) Reverse saturation current
(ii) Dynamic resistance of diode
21. Why the name varicap is given to varactor diode? Give its two applications.
22. A germanium diode has a contact potential of 0.2v, while the concentration of acceptor
impurity atoms is 3×1020 per m3, calculate for a reverse bias of 0.1v, the width of the

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EC DEPARTMENT
depletion region. If the reverse bias is increased to 10v, calculate the new width of the
depletion region. Assuming cross-sectional area of the junction as 1mm2, calculate the
transition capacitance values for both cases. Assume Er as 16 for germanium.

Diode Circuits

1. Draw and explain bridge rectifier circuit with capacitorfilter. Draw necessary waveforms.
2. Draw following diode circuits with input and output Waveforms:
(i) Voltage doublers circuit (03 mks)
(ii) Positive clipping circuit ( 02 mks)
(iii) Negative clamper circuit ( 02 mks)
3. A 5kΩ load is fed from a bridge rectifier connected with a transformer secondary whose
primary is connected to 460V, 50 Hz supply. The ratio of number of primary to secondary
turns is 2 : 1. Calculate dc load current ,dc load voltage , ripple voltage and PIV rating of
diode (04mks)
4. A 100μF capacitor when used as a filter has 12 V dc Across it with a terminal load resistor of
2.5kΩ. If the rectifier is full wave and supply frequency is 50 Hz calculate the percentage of
ripple in the output (03 mks)
5. A diode having internal resistance 20Ω is used for half-wave rectification. If the applied
voltage V=50sin(ωt) and load resistance RL=800Ω,find:1) Im, Idc, Irms 2) d.c. output
voltage 3) efficiency of rectification. (07 mks)
6. Sketch the full-wave rectifier circuit and explain its operation.
7. Define the rectification and describe the full wave bridge rectifier with the help of neat
circuit diagram and waveforms. (07 mks)
8. Define following terms:
a) PIV
b) Ripple factor
c) Reverse recovery time of diode

9. A sinusoidal voltage peak value of 40V and frequency 50 Hz is applied at the input of a half
wave rectifier, No filter is used. The Load resistance is 500 Ω. Neglect cut-in voltage. Diode
has R = 5 Ω and Rr =.∞ (i) Draw Output voltage waveform and derive expression for DC
f
output voltage. (ii) Calculate DC value of load current, rms value of load current and
Rectification efficiency.
10. Explain the different types of clipping circuits. (07 mks)
11. State the use of clipping circuits. Discuss with neat sketch working of a biased parallel
clipper. (07 mks)
12. A sinusoidal voltage peak value of 10V and frequency 50 Hz is applied at the input of
clipping circuit shown in figure below. Draw output voltage waveform and transfer
characteristic. Assume both diodes are ideal. (07 mks)

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13. Design a Zener regulator (Fig. 2) for following specifications: load current IL = 20
,mA, output voltage Vo = 5 V, Zener wattage PZ = 500 mW, Input voltage Vi =12 +/-
2 V, and IZ,(min) = 8 mA,
14. Draw the circuit of sampling gate and explain its operation
15. Figure shows the two way clipper. If the input voltage is sinusoidal source of 16v
peak-to-peak, sketch the output waveform. (Assume voltage drop across diodes is
0.7v)

18. Draw double-diode clipper circuit which limits output voltage at two independent levels.
Explain its working with necessary waveforms.
19. Draw output waveform of following circuits. Consider input of 20V (peak to
peak), 10kHz sine wave and assume ideal diode.

(ii)

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20. When a diode is driven from forward condition to reverse condition, draw and
explain waveforms for (1) minority carrier concentration at the junction of the
diode (2) current flowing through the diode circuit, and (3) voltage across the
diode. Assume resistance (RL) is present in series with diode. (07 mks)
21. A symmetrical 5-kHz square wave whose output varies between +10 V and -10 V
is impressed upon the clipping circuit shown in Fig. 1. Assume diode forward
resistance (Rf) as zero, diode reverse resistance as (Rr) 2M, diode cut-in voltage
(Vγ) as zero. Sketch the steady-state output waveform, indicating numerical values
of the maximum, minimum, and constant portions.(07 mks)

22. Design a Zener regulator (Fig.) for following specifications: load current IL =
20mA, output voltage Vo = 5 V, Zener wattage PZ = 500 mW, Input voltage Vi =
12 +/- 2 V, and IZ,(min) = 8 mA,

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23. Draw the circuit of sampling gate and explain its operation.
24. Figure shows the two way clipper. If the input voltage is sinusoidal source of16v
peak-to-peak, sketch the output waveform. (Assume voltage drop across diodesis
0.7v)[5]
25. Sketch the full-wave rectifier circuit and explain its operation. [4]

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Transistor Characteristics

1. Explain following for npn transistor. (05 mks)

(i) Current components.
(ii) Regions of operation according to biasing condition

2. Draw circuit of CB transistor and explain its input and output characteristics.-(Imp)
3. Draw the circuit of CE configuration of transistor. Explain Input and output
characteristics. Derive α = β / β+1 (7mks)
4. Define base spreading resistance
5. Explain the base-width modulation and its effect on minority-carrier concentration in the
base region of a transistor as well as on the common-baseinput characteristics of a typical p-
n-p transistor.
6. Explain the input and output characteristic of n-p-n transistor in CE configuration. Also
indicate different regions.
7. Explain the input and output characteristic of n-p-n transistor in CB configuration. Also
indicate different regions.
8. Draw CE transistor configuration and give its input and output characteristics. Also derive
the relation between current gain of CE,CB and CC configurations.
9. Derive relation between α and ß for a transistor
10. Why CE configuration is preferred for amplification
11. Verify mathematically that transistor means “transfer resistor”. Explain the working of
phototransistor.
12. Draw and explain Ebers-Moll model of P-N-P transistor.
13. What is early effect in CB configuration? Explain with graph
14. In npn transistor α = 0.98, I = 20 mA, I = 3μA. Determine I , I , ß and I
E CBO C B CEO
15. Figure shows an n-p-n transistor. It has the Ico= 2×10-5mA and β=100. Find
the transistor currents and value of α of transistor.

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16. How does the designer minimize the percentage variation in IC , due to variation
in ICO and VBE and due to variation in β in transistor amplifier circuit.
17. A 230 V , 50 Hz AC voltage is applied to the primary of a 5:1 step downtransformer which is
used in a bridge rectifier having a load resistor of a value 470 ohm 1. Assuming the diodes to
be ideal , determine the following
(a) DC output voltage
(b) DC power deliver to the load
(c) Maximum value of output current
(d) Average value of output current
(e) RMS value of output current
(f) Output frequency
(g) PIV of diode

18. Determine whether or not the transistor in below circuit is in saturation. Assume β =50
and VCE( sat) =0.3V, VBE =0.7V.

19. For following circuit , calculate the minimum and maximum value of emitter current when β
of transistor varies from 75 to 150 . Also calculate the corresponding values of collector to
emitter voltage. Take VBE = 0.3V, Rb= 10kohm , Rc= 50 ohm , Re= 100 ohm, Vcc= +6V.

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20. A silicon transistor with VBE, sat = 0.8 V, β = hFE = 100, VCE, sat = 0.2 V is used in the
circuit shown in Fig. Find the minimum value of RC for which the transistor remains in
saturation.

26. A silicon transistor with VBE, sat = 0.8 V, β = hFE = 100, VCE, sat = 0.2 V is used in
the circuit shown in Fig. . Find the minimum value of RC for which the transistor remains in
saturation.

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