Small-Signal Amplifiers

E2002 Analog Electronics

Prof. Zheng Yuanjin
Email: yjzheng@ntu.edu.sg
Office: S2.2-B2-46
Tel: 65927764

1
 Module Goals

Understanding of concepts related to:

• Biasing of Transistors (BJT and MOSFET)
• dc and ac equivalent circuits for small-signal amplifier
• Small-signal models of BJT and MOSFET
• Amplifier characteristics such as voltage gain, input and output
resistances
• Analysis of three broad classes of single-stage amplifiers
- Inverting amplifiers – common-emitter and common-source
configurations
- Followers – common-collector and common-drain configurations
- Noninverting amplifiers – common-base and common-gate
configurations

2
 References

Text Book
1. Richard C. Jaeger and Travis N. Blalock,
“Microelectronic Circuit Design”, 4th Edition, McGraw
Hill, 2011, Chapters 4, 5, 13 and 14.

References
1. Allan R. Hambley, “Electronics”, 2nd Edition, Prentice
Hall, 2000
2. Donald A. Neamen, “Electronic Circuit Analysis and
Design”, 2nd Edition, McGraw-Hill, 2002

3
 Bipolar Junction Transistors
Bipolar transistor can be thought of as a sandwich of three doped Si regions. The outer two regions
are doped with the same polarity, while the middle region is doped with opposite polarity.
Collector (C) Collector (C) C
-
VBC IC
IB + n
npn Base (B) + Base (B)
VCE p B
+
- n
VBE
I
- E
Emitter (E) Emitter (E) E
Emitter (E) Emitter (E) E
+ I
E
IB VEB + p
- Base (B)
pnp Base (B) - VEC n B
VCB - p
I
+ C
Collector (C) Collector (C) C

5
 Output Characteristics of BJT

iC 4.0 mA

Saturation region vNPN =0.7V

C
(vCE  vBE - vNPN )
VBE= 0.717 V
B +
vCE 3.0 mA
IB= 30 mA
-

Collector current, iC
Forward-active region
iB E (vCE  vBE - vNPN , iC = biB)V BE= 0.708 V
2.0 mA
IB= 20 mA
VBE= 0.700 V
IB= 15 mA
iC 1.0 mA VBE= 0.692 V
IB= 10 mA
C
B -
vEC
+ 0A
0V 2V 4V 6V 8V 10 V 12 V
iB E Cutoff
Collector-emitter voltage, vCE (npn) or vEC (pnp)
Reverse-active region
(vBE  vCE  0) -1.0 mA (iB = 0, iC = 0)

11 6
 Operation Regions of BJT
C C E V -V 0.7 V E
- Forward-active region + E B
+
+
VBC < 0 V BEJ (npn) forward biased VEB 0.7 V
VB < VC
+ BCJ (npn) reversed biased B -
B + B - - B -
+ VBE 0.7 V +
VBE 0.7 V VCB < 0 V VB > VC
IC = b IB = a IE
- - + -
E V –V 0.7V E => Good amplifier C C
B E

C C E E
- + V -V < 0.7 V-
+ Cutoff region E B
VBC < 0 V VEB < 0.7 V
VB < VC BEJ (npn) reverse biased
+
B B - BCJ (npn) reverse biased B -- B +
+ - +
VBE < 0.7 V IC = 0 VCB < 0 V VB > VC
- + => Open Switch + -
E VB -VE < 0.7V E C C

Note: the junctions refer to EBJ and CBJ for pnp transistor.

7
 Operation Regions of BJT (Cont.)
C C Saturation region E V -V 0.7 V E
- + E B
+
+ BEJ (npn) forward biased
VBC > 0 V VEB 0.7 V
VB > VC BCJ (npn) forward biased
+
B + B - Þ Closed switch -
- B -
+ +
VBE 0.7 V Þ VBE 0.7 V VCB > 0 V VB < VC
- - VBC = 0.4~ 0.5 V + -
E V –V 0.7V E C C
B E
Þ VCE(SAT) = 0.2~0.3 V
C C E E
- + V -V < 0.7 V-
+ Reverse-active region E B
VBC >0 V VEB < 0.7 V
VB >VC
+ BEJ (npn) reverse biased
B B - - B +
+ - BCJ (npn) forward biased - +
VBE < 0.7 V Þ Weak amplifier VCB > 0 V VB < VC
- + Þ Normally not use + -
E VB -VE < 0.7V E C C

Note: the junctions refer to EBJ and CBJ for pnp transistor.

8
 BJT Biasing for Different Regions of
Operation
Region NPN PNP
VBE 0.7 V VEB 0.7 V
Forward-active
VBC < 0 V VCB < 0 V

VBE 0.7 V VEB 0.7 V

Saturation VBC > 0 V VCB > 0 V

VBE < 0.7 V VEB < 0.7 V

Cutoff VBC < 0 V VCB < 0 V

VBE < 0.7 V VEB < 0.7 V

Reverse-active
VBC > 0 V VCB > 0 V

9
 BJT Bias Analysis: Active Mode

VBE = VB - VE = 3.0 – 2.3 = 0.7 V

VCC VBC = VB - VC = 3.0 – 6 V = - 3.0 V

C
+
VC = 6 V 3.0 V BCJ is reversed biased by 3.0 V
-
VB Q B
+
= 3.0 V VE = 2.3 V 0.7 V BEJ is forward biased by 0.7 V
-
E

Q in active mode and can be used as linear amplifier.

10
 BJT Bias Analysis: Cut-off Mode

VBE = VB - VE = 3.0 – 2.7 = 0.3 V

VCC VBC = VB - VC = 3.0 – 6 V = - 3.0 V

C
+
VC = 6 V 3.0 V BCJ is reversed biased by 3.0 V
VB Q
-
B
= 3.0 V +
VE = 2.7 V 0.3 V BEJ is forward biased by 0.3 V
-
E

Q is cutoff.

11
 BJT Bias Analysis: Saturation mode

VBE = VB - VE = 6.0 – 5.2 = 0.8 V

VCC VBC = VB - VC = 6.0 – 5.5 V = 0.5 V

C
-
VC = 5.5 V 0.5 V BCJ is forward biased by 0.5 V
+
VB Q B
= 6.0 V +
VE = 5.2 V 0.8 V BEJ is forward biased by 0.8 V
-
E
Q is in Saturation!

VCE = VCB + VBE = -0.5 + 0.8 = 0.3 V

12
 BJT Bias Analysis: Determine DC node
voltages and branch currents
10 V Assume active-mode operation,
3
C I 4.7 kW VE = VB - VBE = 6 – 0.7 = 5.3 V.
b > 200 V 4
C
IE = 5.3/3.3 = 1.6 mA
Q Since b is very large, a  1 => IC  IE = 1.6 mA
V 1
+
6V - I 2 E
VC = 10 – 1.6 × 4.7 = 2.48 V
E 3.3 kW
VBC = VB – VC = 6 – 2.48 = 3.52 V
=> Wrong assumption! Q is in saturation mode.
In saturation region, VCE  0.2 to 0.3 V. Assume VCE(SAT) = 0.2 V,
VE = 6 – 0.7 = 5.3 V and IE = 5.3/3.3 = 1.6 mA.
VC = VE + VCE(SAT) = 5.3 +0.2 = 5.5 V
IC = (10 – 5.5)/4.7 = 0.96 mA. IB = IE – IC = 1.6 – 0.96 = 0.64 mA
bforced = IC/IB = 0.96/0.64 = 1.5
13
 Introduction to Amplifiers
• BJT is an excellent amplifier when biased in forward-active region
• MOSFET can be used as amplifier when biased in saturation region.
• In these regions, transistors can provide high voltage, current and power
gains.
• Bias refers to setting the ‘quiescent’ (idle) current when there is no signal
presence. It sets the transistor in the desired operation region.
• Q-point (determined by DC analysis) also determines
– Small-signal parameters of transistor
– Voltage gain, input resistance, output resistance
– Maximum input and output signal amplitudes
– Power consumption
– Efficiency (o/p signal power vs DC i/p power)

14
 Biasing BJT for linear amplification
BJT is forward biased for small-signal
E amplifier.
IC1 IB2
Q2 2 V + V
IB1 C B C - CC
B Q1 1.3 V + IC2
All the principles that applied to npn’s also
+ E - apply to pnp’s with the exception that emitter
0.7 V -
is at a higher potential than base and base at a
higher potential than collector
I 
I C  I B ; I E  C ;  
npn pnp   1
kT
 VBE   VEB  VT  25 mV @ 25C
I C  I S exp   I C  I S exp   q
V
 T  V
 T 
VT : Thermal voltage in V.
with Early effect: with Early effect:
k : Boltzmann’s constant, 8.62×10-5 eV/K.
V  V  V  V 
I C  I S exp  BE   1  CE  I C  I S exp  EB   1  EC  T : absolute temperature in K.
 VT   VA   VT   VA 
q : charge, 1.602×10-19 C.

15
 BJT Amplifier
10V vCE(t)
10V
vBE(t)
RC 3.3kW
0.708
V iC 6.7V
0.700
V
iB +
0.692 5V
V 0V vCE-
t +
+ vBE
ac signal voltage 0.008sinwt V vbe - 3.3V
-

+
dc biasing voltage 0.700V -
VBE
0V t

Q-point is set at (IC, VCE) = (1.5 mA, 5 V) with IB = 15 mA.

Total base-emitter voltage is: vBE = VBE + vbe
Collector-emitter voltage is: vCE = VCC - iCRC  load line
6 16
 BJT Amplifier (contd.)
8 mV peak change in vBE
4.0 mA

t
Þ 5 mA change in iB
VBE= 0.717 V
3.0 mA
IB= 30 mA Þ 0.5 mA change in iC
Collector current, iC

vce(t)
vbe(t)

2.0 mA
VBE= 0.708 V 1.65 V change in vCE .
IB= 20 mA

8 mV t VBE= 0.700 V If changes in vBE are small

Q-point IB= 15 mA

1.0 mA VBE= 0.692 V enough, then iC and vCE

IB= 10 mA
Lo
ad
l ine
waveforms are undistorted
replicas of input signal.
1.65 V
0A
0V 2V 4V 6V 8V 10 V 12 V
Collector-emitter voltage, vCE v 1.65180
Av  ce 
vbe 0.0080
180° phase shift between input and output signals.
206180  206

1 17
 Coupling and Bypass Capacitors
Vcc
large coupling bypass capacitor,
capacitors or dc provides low impedance
blocking capacitors, RB1 RC path for ac current from
C2  
their reactance at vo emitter to ground,
RI C1   effectively eliminating RE
signal frequency is Q RL
negligible. Rout from circuit when ac
+ RB2
signals are considered (RE
vi
 Rin
RE C3   is required for good Q-

point stability).

• AC coupling through capacitors is used to inject ac input signal and extract

output signal without disturbing the Q-point
• Capacitors provide negligible impedance at frequencies of interest and
provide open circuits at dc.

18
 DC and AC Analysis
• DC analysis:
– Obtain dc equivalent circuit by replacing all capacitors by open circuits
and inductors by short circuits. ac voltage sources by ground
connections and ac current sources by open circuits.
– Find Q-point from dc equivalent circuit by using appropriate large-
signal transistor model.
• AC analysis:
– Obtain ac equivalent circuit by replacing all capacitors by short circuits,
inductors by open circuits, dc voltage sources by ground connections
and dc current sources by open circuits.
– Replace transistor by small-signal model
– Use small-signal ac equivalent to analyze ac characteristics of amplifier.
• Combine end results of dc and ac analysis to yield total voltages and currents
in the network.

19
 DC Equivalent for BJT Amplifier
Vcc Vcc

RB1 RC C2   RB1 RC
vo
RI C1  
Q RL Q
Rout
+ RB2
vi Rin RB2

 RE C3   RE

1
XC   0 rad/s (DC), X c  (open circuit)
C
All capacitors in original amplifier circuits are replaced by
open circuits, disconnecting vI, RI, and R3 from circuit.

3 20
 DC Analysis Example: Four-Resistor
BJT Biasing Circuit
+15 V +15 V +15 V Req  RB1 RB 2 +15 V

RC RC 100 50 RC
RB1 RB1
5 kW 5 kW 33.3 k  5 kW
100 kW 100 kW
Req
Q b = 100 Q Q 2
33.3 kW
B B
RB2 RB2 +
RE RE 5 V- Veq 1 RE
50 kW 50 kW 3 kW
3 kW 3 kW

 RB 2 
Veq   VCC
KVL 1: Veq = IBReq + VBE + IERE R
 B1  R B2 

5 = 33.3IB + 0.7 + 101×IB×3 

50
15 5 V
100  50
IB = 0.0128 mA
IC = b IB =1.28 mA, IE = (b+1) IB =1.29 mA
KVL 2: VCE = 15 – ICRC – IERE = 15 – 1.28×5 – 1.29×3 = 4.73 V

21
 DC Analysis Example: Four-Resistor
BJT Biasing Circuit (cont.)
+15 V +15 V +15 V +15 V
1.28 mA
RC 0.103 mA RC RC
RB1 RB1
5 kW 5 kW 5 kW
100 kW 100 kW 8.6 V
0.0128 mA 0.0128 mA Req 4.57 V
Q b = 100 Q Q
33.3 kW
4.57 V 3.87 V B
RB2 RB2 +
RE RE 5 V- Veq RE
50 kW 50 kW
3 kW 3 kW1.29 mA 3 kW
0.09 mA

VB = VBE + IERE or Veq – IBReq = 0.7 + 3.87 = 4.57 V

VC = VCC - ICRC = 15 – 1.28 × 5 = 8.6 V
VBC = VB – VC = 4.57 – 8.6 = - 4.03 V.

BCJ is reverse baised, Q is indeed in active mode as had been assumed.

22
 AC Equivalent for BJT Amplifier
VCC

RB1 RC C2   RC
RB1
RI C1   RI
Q RL Q RL
+
vi - RB2 vi +
RB2
-
RE C3  
RE

RI
RI Q
Q
+ RC||RL
+ RC RL vi -
RB1||RB2
vi -
RB1 RB2

11 23
 Hybrid-Pi Model of BJT
Transconductance:
ib ic
B C IC
+ + g m  40 I C
vbe rp gmvbe ro vce
VT
kT
-
E - where VT  25 mV
q
• The hybrid-pi small-signal model is Input resistance:
the intrinsic low-frequency 
r 
representation of the BJT. gm
• Small-signal parameters are
Output resistance:
controlled by the Q-point and are
independent of geometry of BJT 𝑉 𝐴 +𝑉 𝐶𝐸 𝑉 𝐴
𝑟𝑜= ≈ if 𝑉 𝐴 ≫ 𝑉 𝐶𝐸
𝐼𝐶 𝐼𝐶
24
 Equivalent Forms of Small-Signal Model
for BJT
ib ic ib ic
B C B C
+ +
vbe rp gmvbe ro vbe rp b ib ro

- -

E E
• Voltage -controlled current source gmvbe can be transformed into current-
controlled current source, v i r
be b 

g m vbe  g mib r  ib
vce
ic  ib   ib
ro
• Basic relationship ic= b ib is useful in both dc and ac analysis when BJT
is in forward-active region.
25
 Small Signal Operation of BJT
 vBE   VBE  vbe 
iC I S exp   I S exp  
V
 T   VT 

 VBE   vbe   vbe 1  vbe 

2
1  vbe 
3

 iC I S exp   exp   I C  1         
 VT   VT   VT 2!  VT  3!  VT  
v 1  vbe 
2
1  vbe 
3

ic iC  I C I C  be
       
 VT 2  VT  6  VT  
For linearity, ic should be proportional to vbe
2
1  vbe  vbe
    vbe  2VT 0.05 V  vbe 0.005 V
2  VT  VT

26
 Small-Signal Model for pnp BJT
iC IC
iB
ic
i B = IB - i b
+ vbe
ib -
VCC
i C = IC - i c
IB VEB

E ib ic C
- B
+
vbe rp gmvbe gmvbe
ro rp ro
vbe
or bib or bib
B + C -
ib ic
E

The small signal model for pnp transistor is exactly IDENTICAL to that of
npn. This is not a mistake because the current direction is taken care of by
the polarity of VBE.
16 27
 Summary of Small Signal Parameters
Parameter BJT n-MOSFET
2I D
IC VGS  VTN
gm K n VGS  VTN 1  VDS  K n VGS  VTN 
VT
2 K n I D 1  VDS   2 K n I D

 VT
rp gm

IC

1
VA  VCE VA  VDS
ro   1
IC IC 
ID ID
Small-signal vbe 0.005 V vgs 0.2 VGS  VTN 
requirement
 Small Signal Analysis of Fully Bypass
C-E Amplifier
VCC

RB1 RC C2   • The ac equivalent circuit is

RI C1   C
B Q RL constructed by assuming that
vi +
RB2
E all capacitances have zero
-
RE C3  
impedance at signal
frequency and dc voltage
RI
C source is ac ground.
B Q + • Assume that Q-point is
E RC RL
vi +
-
RB vo already known.
-
RB RB1 RB 2

11 29
 Fully Bypass C-E Amplifier:
Voltage Gain
RI
B C
+ + Overall voltage gain from source vi
gmvbe
vi +
RB rp
to output voltage across RI is:
- vbe ro RC RL vo
- - vo  v  v 
E Av   o  be 
vi v  v 
R r R r R R  be  i 
B
L 0 C L
v 
Terminal voltage gain between  Avt  be 
base and collector is:  v 
 i 
vc vo
Avt    R r 
vb vbe B 
 
 Av  g m RL 
 g m vbe RL  R  R r 
  g m RL  I B  
vbe

30
 Fully Bypass C-E Amplifier Input Resistance
VCC

RB1 RC C2  
ix B C
RI C1  
+ +
gmvbe
Q RL +
vx -
RB rp vbe ro RC RL vo
+
vi Rin RB2
-
RE C3   - -
E
R rB

RB  RB1 RB 2 vx ix (R r )
B
vx
Rin  R r
ix B

10 31
 Fully Bypass C-E Amplifier
Output Resistance
VCC

B C ix
RB1 RC C2   + gmvbe
RI C1   +
Q RL RI RB vbe rp ro RC - vx
Rour
vi +
RB2 -
-
RE C3   E
RB  RB1 RB 2

vx vx vx  1 1 
1
ix    g m vbe Rout     RC ro
RC ro ix  RC ro 
vx v Rout RC if ro ? RC
vbe 0  ix   x
RC ro

11 32
 Fully Bypass C-E Amplifier Example
Find the Q-point from dc equivalent
circuit
105 I B  VBE    1 I B 1.6 104  5

I B 3.71 A
I C 65 I B 241 A
I E 66 I B 245 A
Problem: Find voltage gain, input
and output resistances.
Given b = 65, VA = 50 V
5  104 I C  VCE  1.6 104  I E   5  0
Assume VBE = 0.7 V, and BJT biased
for small signal operating conditions. VCE 3.67 V

33
 Analysis of Fully Bypass C-E Amplifier
(contd.)
Construct the ac equivalent and
simplify it.

Rin RB r 6.23 k 

gm 40IC 9.6410 3 S
 Rout  RC ro 9.57 k 
r  6.64 k 
gm
vo  Rin 
V V Av   g m  Rout R3    84.0
ro  A CE 223 k  vi  RI  Rin 
IC

34
 Amplifier Families
• Constraints for signal injection and extraction yield three families of amplifiers
– Common-Emitter (C-E)/Common- Source (C-S)
– Common-Base (C-B)/Common- Gate (C-G)
– Common-Collector (C-C)/Common- Drain (C-D)
• All circuit examples here use the four-resistor bias circuits to establish Q-point
of the various amplifiers
• Coupling and bypass capacitors are used to change the ac equivalent circuits.
VCC VDD

RB1 RC RG1 RD

Q M

RB2 RG2
RE RS

35
 Amplifier Family
v  v  Kn
 TN 
2
i i I exp  b e is id  v  v  V
 2
g s
V
e c S

  T

VCC VDD

RC C2   RG1 RD C2  
RB1
RI C1  
RI C1  
Q RL M RL
C1 C R
2  I
C2 R
C1  I
+
vi + vi RG2
- RB2 +
- +
vi
RE RL - vi RS RL -

C-E: i/p at B, o/p at C C-S: i/p at G, o/p at D

C-C: i/p at B, o/p at E C-D: i/p at G, o/p at S
C-B: i/p at E, o/p at C C-G: i/p at S, o/p at D
17 36
 C-E Amplifier (Inverting Amplifier):
Terminal Voltage Gain
VCC
RI B C ic
RB1 RC C2   + gmvbe
vo rp +
RI C1   vbe ro
Q RL
vi +
- RC RL vo
RE1 - RB
E
vi +
- RB2 ie -
RE2 C3   RE1

RB RB1 RB 2 RL RC RL

 iro g m vbe , ic  g m vbe ie
vc  ic RL  g m vbe RL  g m RL
Avt    
vb vbe  ie RE1 vbe  g m vbe RE1 1  g m RE1
13 37
 C-E Amplifier (Inverting Amplifier):
Input Resistance
VCC ib B C
+ i b
RB1 RC C2   Rin R’in v rp ro +
be
RI
vo
C1  
Q RL vb +
- RC RL vo
-
E
RE1 RB = RB1 || RB2 (+1)ib -
Rin
vi +
RB2 RE1
-
RE2 C3  

vb ib r    1ib RE1

vb
Rin  r    1 RE1 Rin Rin RB
ib
20 38
 C-E Amplifier (Inverting Amplifier):
Overall Voltage Gain
VCC RI B C
+ gmvbe
RB1 RC C2   Rin vbe rp ro +
RI
vo + vo
C1  
vi - RC RL
Q RL -
E
RB = RB1 || RB2 -
RE1
+ Rin RE1
vi - RB2
RE2 C3  

RI

+
+ Rin vb
vi
vo vo vb Rin -
Av     Avt  -
vi vb vi RI  Rin

39
 C-E Amplifier (Inverting Amplifier):
Output Resistance
VCC ix
B C
+ gmvbe
RB1 RC C2   vbe rp ro R’out Rout
RI C1  
vo
+
Q RL Rth - ix RC - vx
Rout E
RE1
+ RE1
vi - RB2
RE2 C3  
Rth RI RB1 RB 2

vx ix  g mvbe  ro  ve
 r   r 
ve ix  r  Rth  RE1 vbe    ve    ix  r  Rth  RE 1
 r  Rth   r  Rth 

19 40
 C-E Amplifier (Inverting Amplifier):
Output Resistance (Continue)
B C ix
+ gmvbe
vx ix  g mvbe  ro  ve
vbe rp R’out Rout
ro
  r  
Rth - ix RC
+
vx  ix  g m   ix  r  Rth  RE1  ro
 r  Rth 
-
E  
RE1 ix  r  Rth  RE1

vx  g m r RE1    RE1 
   1 
Rout  ro  1   ro
ix  r  Rth  RE1   r  Rth  RE1 
 RC
Rout Rout

2 41
 C-E Amplifier (Inverting Amplifier):
Input Signal Range
For BJT small-signal operation, |vbe |  5mV.
vr vb r RI ib B C
vbe ib r  b  
Rin r    1 RE1 + gmvbe
Rin Rin rp +
vbe ro
vbe 0.005
vi +
- RC RL vo
 r    1 RE1  -
E
 vb 0.005   RB = RB1 || RB2 -
 r  RE1

   1 g m r , vb 0.005 1  g m RE1 
 Rin   RI  Rin 
 vb  v
 i  vi 0.005  m E1 
1  g R 
R
 I  Rin   R in 
If gmRE1 >> 1, |vi | can be increased beyond 5 mV limit.
42
 Summary: C-E and C-S
Parameter Terminal Voltage Input Resistance Output Resistance
Gain
Amplifier Rin 
Rout
Avt
BJT C-E  g m RL  RE1
r    1 RE1  1  
 ro
1  g m RE 1 r  Rth  RE 1 

MOSFET C-S  g m RL
 1  g m RS1  ro
1  g m RS 1
BJT C-C g m RL
r    1 RL  r  Rth 
ro   
1  g m RL   1 
MOSFET C-D g m RL 1
1  g m RL
 ro
gm
BJT C-B 1
g m RL  1  g m r Rth  ro
gm
MOSFET C-G g m RL 1 1  g m Rth  ro
gm
 C-C Amplifier (Voltage Follower):
Terminal Voltage Gain
VCC
RI ib B+ vbe - (+1)ib E
rp +
RB1 gmvbe
vi
+
RB ro RE RL vo
RI C1   -
=  ib
Q -
C2  
vo C
vi +
- RB2 RE RB RB1 RB 2 RL ro RE RL
RL

ve
Avt  
   1ib RL

 RL

g m RL
vb ib r    1ib RL r   RL 1  g m RL

If g m RL  1, Avt 1  vo vb

8 44
 C-C Amplifier (Voltage Follower):
Input Resistance
VCC
ib B+ vbe - (+1)ib E
rp +
RB1 Rin R’in
vb
+  ib ro RE RL vo
RI C1   - RB
Q -
C2  

Rin vo C
vi +
- RB2 RE RB RB1 RB 2 RL ro RE RL
RL

vb ib r    1ib RL

vb
Rin  r    1 RL Rin Rin RB
ib
18 45
 C-C Amplifier (Voltage Follower):
Overall Voltage Gain
VCC
RI + vbe -
B E
rp +
RB1 + Rin vo
vi gmvbe ro RE RL
RI C1   - RB
Q -
C2  
vo C
vi +
- RB2 RE
RL
RB RB1 RB 2
RI

+
+ Rin vb
vi
vo vo vb Rin -
Av     Avt  -
vi vb vi RI  Rin

46
 C-C Amplifier (Voltage Follower):
Output Resistance
VCC
B
+ vbe - E ix
rp
RB1 Rout +
Rth RI RB1 RB 2 gmvbe ro RE -
vx
RI C1  
Q
C2  
vo C
+
vi - RB2 RE
Rout RL
vx vx g m r vx vx  1 1  1 
ix          vx
RE ro r  Rth r  Rth  RE ro r  Rth r  Rth 

vx vx vx v  1 1  1 
1
ix    g m vbe  Rout  x    
RE ro r  Rth ix  RE ro r  Rth 
 r   r  Rth   r  Rth 
vbe    vx RE ro    RE  
 r  Rth    1    1 

15 47
 C-C Amplifier (Voltage Follower):
Input Signal Range
For BJT small-signal operation, |vbe |  5mV.
vb r vb r
vbe ib r   RI ib + vbe -
Rin r    1 RL B E
rp +
vbe 0.005 +
Rin Rin
RL vo
vi  ib ro RE
- RB
 r    1 RL  -
 vb 0.005  
 r  C
   1 g m r , vb 0.005 1  g m RL  RL ro RE RL

 Rin   RI  Rin 
 vb  v
 i  vi 0.005  m L 
1  g R  
R
 I  Rin   R in 
If g m RL >> 1, |vi | can be increased beyond 5 mV limit.
48
 Summary: C-C and C-D
Parameter Terminal Voltage Input Resistance Output Resistance
Gain
Amplifier Rin 
Rout
Avt
BJT C-E  g m RL  RE 1
r    1 RE 1  1  
 ro
1  g m RE 1 r  Rth  RE 1 

MOSFET C-S  g m RL
 1  g m RS 1  ro
1  g m RS 1
BJT C-C g m RL
r    1 RL  r  Rth 
ro   
1  g m RL   1 
MOSFET C-D g m RL 1
1  g m RL
 ro
gm
BJT C-B 1
g m RL  1  g m r Rth  ro
gm
MOSFET C-G g m RL 1 1  g m Rth  ro
gm
 C-B Amplifier (Noninverting Amplifier):
Terminal Voltage Gain
ro
VCC
RI E C
ic
RC C2   - +
RB1 gmvbe
vo + RE RC vo
vi - vbe rp RL
Q RL
+ B
-
C1   RI
C3  
RB2
+ vi RL RC RL
RE -
 iro  g m vbe , ic  g m vbe
ve veb  vbe
vc  ic RL  g m vbe RL
Avt     g m RL
ve  vbe  vbe
13 50
 C-B Amplifier (Noninverting Amplifier):
Input Resistance
VCC ro

ix E C
RB1 RC C2  
- +
vo Rin gmvbe
+ Rin
Q RL vx - RE vbe rp RC RL vo
C1   RI + B
-
C3  
RB2
RE
+
-
vi RL RC RL
Rin  1  g m r   1  
ix  v 
 x   vx
vbe vec  r   r 
ix   g m vbe  vx  r  r 1
r ro Rin     
This current is small because of large r0 ix    1   g m
vx RE
 vbe  vx , ix   g mvx Rin Rin RE 
r 1  g m RE
20 51
 C-B Amplifier (Noninverting Amplifier):
Overall Voltage Gain
VCC ro

RI E C
RB1 RC C2  
vo - +
gmvbe
RL + Rin
Q vi - RE vbe rp RC RL vo
C1   RI -
+ B
C3  
RB2
RE
+
-
vi
Rin

RI

+
1 RE
vo vo ve Rin vi + Rin ve Rin RE 
Av     Avt  - g m 1  g m RE
vi ve vi RI  Rin -

52
 C-B Amplifier (Noninverting Amplifier):
Output Resistance
VCC ro

E C ix
RB1 RC C2   -
vo gmvbe
Rth vbe rp  RC
Rout Rout +
vx
Q RL -
Rout
C1   RI + B
C3  
RB2 Rth RI RE
RE
+ vi
vx  ix  g mix r Rth  ro  ix r Rth 
-

vx
vx ix  g m vbe  ro  ve    1  g m r Rth  ro  r Rth
Rout
ix
ve ix r Rth 
 1  g m r Rth  ro
vbe  ve  ix r Rth   RC
Rout Rout
20 53
 C-B Amplifier (Noninverting Amplifier):
Input Signal Range
For BJT small-signal operation, |vbe |  5mV.
ro
 Rin 
vbe  ve    vi RI E
 RI  Rin 
C
- +
gmvbe
vbe 0.005 vi + Rin
RE vbe rp RC RL vo
-

 RI  Rin  + -
 vi 0.005   B
 R in 
RE RI  Rin RI
 Rin   1  g m RI 
1  g m RE Rin RE

If RE  RI , vi 0.005 1  g m RI 

54
 Summary: C-B and C-G
Parameter Terminal Voltage Input Resistance Output Resistance
Gain
Amplifier Avt Rin 
Rout

BJT C-E  g m RL  RE1

r    1 RE 1  1  
 ro
1  g m RE 1 r  Rth  RE 1 

MOSFET C-S  g m RL
 1  g m RS1  ro
1  g m RS 1
BJT C-C g m RL
r    1 RL  r  Rth 
ro   
1  g m RL   1 
MOSFET C-D g m RL 1
1  g m RL
 ro
gm
BJT C-B 1
g m RL  1  g m r Rth  ro
gm
MOSFET C-G g m RL 1 1  g m Rth  ro
gm
 Current Gain

ii RI io
Amplifier +
vi +
-
C-E, C-C, C-B, C-S, RL vo
Rin C-D, C-G
-

vo
io RL vo RI  Rin RI  Rin
Ai      Av 
ii vi vi RL RL
RI  Rin

56