Professional Documents
Culture Documents
IET Power Electronics - 2019 - Hazdra - Displacement Damage and Total Ionisation Dose Effects On 4H SiC Power Devices
Added by shriram1082883
Komikesari 2020 J. Phys. Conf. Ser. 1572 012017
Added by shriram1082883
NEPP CP 2021 Lauenstein Paper IRPS SiC Power Device Reliability 20210010338
Added by shriram1082883
IET Power Electronics - 2021 - Li - A Novel Gate Driver For Si SiC Hybrid Switch For Multi Objective Optimization
Added by shriram1082883