CMP50N03/CMB50N03/CMI50N03

N-Ch 30V Fast Switching MOSFETs

General Description Product Summery

The 50N03 is N-ch MOSFETs

BVDSS RDSON ID
with extreme high cell density ,
30V 12m 50A
which provide excellent RDSON
and gate charge for most of the
Applications
synchronous buck converter
LED POWER CONTROLLER
applications. DC-DC & DC-AC CONVERTERS
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
Features MOTOR CONTROL, AUDIO AMPLIFIERS

Simple Drive Requirement

TO220 / TO263/TO262 Pin Configuration
Fast Switching
Low On-Resistance

G GD
D S
S
TO-220 TO-263 TO-262
G D S
Absolute Maximum Ratings (CMP50N03) (CMB50N03) (CMI50N03)

Symbol Parameter Rating Units

VDS Drain-Source Voltage 30 V
VGS Gate-Sou ce Voltage 20 V
ID@TC=25 Continuous Drain Current 1 50 A
1
ID@TC=100 Continuous Drain Current 40 A
2
IDM Pulsed Drain Current 150 A
3
EAS Single Pulse Avalanche Energy 45 mJ
IAS Avalanche Current 50 A
PD@TC=25 Total Power Dissipation 64 W
TSTG Storage Temperature Range -55 to 175
TJ Operating Junction Temperature Range -55 to 175

Thermal Data

Symbol Parameter Typ. Max. Unit

R JA Thermal Resistance Junction-ambient 1 --- 62 /W
R JC Thermal Resistance Junction-case --- 1.5 /W

1
CMP50N03/CMB50N03/CMI50N03
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
BVDSS TJ BVDSS Temperature Coefficient Reference to 25 , ID=1mA --- 0.025 --- V/
VGS=10V , ID=25A --- 10.5 12
RDS(ON) Static Drain-Source On-Resistance2 m
VGS=4.5V , ID=25A --- 16 20

VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1 --- 3 V

VDS=24V , VGS=0V --- --- 1

IDSS Drain-Source Leakage Current uA
VDS=24V , VGS=0V, T C = 125 °C --- --- 25
IGSS Gate-Source Leakage Current VGS 20V , VDS=0V --- --- 100 nA
gfs Forward Transconductance VDS=5 V , ID=25A --- 50 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.3 ---
Qg Total Gate Charge I D = 25 A --- 23 ---
Qgs Gate-Source Charge V DS = 1 5 V --- 8.6 --- nC
Qgd Gate-Drain Charge VGS = 4.5V --- 7.3 ---
Td(on) Turn-On Delay Time V DS = 1 5 V --- 12.2 ---
Tr Rise Time I D = 1A --- 10 ---
ns
Td(off) Turn-Off Delay Time R G =6 --- 45 ---
Tf Fall Time V GS =10V --- 15.5 ---
Ciss Input Capacitance --- 2050 ---
Coss Output Capacitance VDS=15V , VGS=0V , f=1MHz --- 389 --- pF
Crss Reverse Transfer Capacitance --- 153 ---

Diode Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

1
IS Continuous Source Current --- --- 50 A
VG=VD=0V , Force Current
ISM Pulsed Source Current2 --- --- 150 A
2
VSD Diode Forward Voltage VGS=0V , IS=25 A , TJ=25 --- --- 1.3 V

Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,ID =12A