NS28N50T

28A, 500V N-CHANNEL

POWER MOSFET

 DESCRIPTION
The NS28N50T is a N-Channel enhancement mode power
MOSFET. The device adopts planar stripe and uses DMOS
technology to minimize and provide lower on-state resistance and
faster switching speed. It can also withstand high energy pulse
TO- 247
under the avalanche and commutation mode conditions.
The NS28N50T is ideally suitable for high efficiency switch
mode power supply, power factor correction, electronic lamp ballast
based on half bridge topology.
 FEATURES
* RDS(ON) ≤ 0.22Ω @ VGS=10V, ID=14A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
 SYMBOL

 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS ±30 V
Continuous ID 28 A
Drain Current
Pulsed (Note 2) IDM 56 A
Avalanche Energy Single Pulsed (Note 3) EAS 240 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 3.8 V/ns
Power Dissipation PD 280 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L = 10mH, IAS = 6.9A, VDD = 50V, RG= 25Ω ,Starting TJ = 25°C
4. ISD≤28A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ= 25°C
 THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θJA 60 °C/W
Junction to Case θJC 2.24 °C/W

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 NS28N50T
 ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 500 V
Drain-Source Leakage Current IDSS VDS=500V, VGS=0V 10 μA
VGS=30V, VDS=0V 100 nA
Gate-Source Leakage Current IGSS
VGS=-30V, VDS=0V -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=14A 0.22 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 4100 pF
Output Capacitance COSS VDS=25V, VGS=0V, f=1.0MHz 380 pF
Reverse Transfer Capacitance CRSS 8.5 pF
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1) QG 72 nC
VDS=100V, VGS=10V, ID=28A
Gate-Source Charge QGS 17 nC
IG=1mA (Note 1, 2)
Gate-Drain Charge QGD 12 nC
Turn-On Delay Time (Note 1) tD(ON) 50 nS
Turn-On Rise Time tR VDD=100V, VGS=10V, ID=28A, 22 nS
Turn-Off Delay Time tD(OFF) RG =25Ω (Note 1, 2) 180 nS
Turn-Off Fall Time tF 53 nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode
IS 28 A
Forward Current
Maximum Pulsed Drain-Source Diode Forward
ISM 56 A
Current
Drain-Source Diode Forward Voltage (Note 1) VSD IS=28A, VGS = 0V 1.4 V
Body Diode Reverse Recovery Time trr IS=28A, VGS=0V, 360 ns
Body Diode Reverse Recovery Charge Qrr dIF/dt=100A/µs 4.6 µC
Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating ambient temperature

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 NS28N50T
 TEST CIRCUITS AND WAVEFORMS

Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)
di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

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 NS28N50T
 TEST CIRCUITS AND WAVEFORMS (Cont.)

VDS
90%

10%
VGS
tD(ON) tD(OFF)
tR tF

Switching Test Circuit Switching Waveforms

VGS

QG
10V

QGS QGD

Charge

Gate Charge Test Circuit Gate Charge Waveform

BVDSS
IAS

ID(t)
VDS(t)
VDD

tp Time

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

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 NS28N50T
 TYPICAL CHARACTERISTICS

JIANG YIN NEW CORE MICRO-ELECTRONICS CO;LTD http://www.jyxxdz.com

 NS28N50T
 TYPICAL CHARACTERISTICS (Cont.)

JIANG YIN NEW CORE MICRO-ELECTRONICS CO;LTD http://www.jyxxdz.com

 NS28N50T
 TYPICAL CHARACTERISTICS (Cont.)

JIANG YIN NEW CORE MICRO-ELECTRONICS CO;LTD http://www.jyxxdz.com