Ame 8800
Ame 8800
n Applications
l Instrumentation
n Functional Block Diagram l Portable Electronics
l Wireless Devices
l Cordless Phones
IN OUT
l PC Peripherals
l Battery Powered Widgets
Overcurrent
Shutdown l Electronic Scales
Thermal R1
Shutdown
n Typical Application
C1 C2
5V
1 µF 2.2µF
V ref =1.215V R2
GND
1
AME, Inc.
AME8800 / 8811 300mA CMOS LDO
n Pin Configuration
TO-92
Front View
AME8800 AME8811
1. GND 1. VOUT
2. VIN 2. GND
3. VOUT 3. VIN
1 2 3
3 5 4
1 2 1 2 3 1 2 3
2
AME, Inc.
AME8800 / 8811 300mA CMOS LDO
3
AME, Inc.
AME8800 / 8811 300mA CMOS LDO
4
AME, Inc.
AME8800 / 8811 300mA CMOS LDO
5
AME, Inc.
AME8800 / 8811 300mA CMOS LDO
6
AME, Inc.
AME8800 / 8811 300mA CMOS LDO
7
AME, Inc.
AME8800 / 8811 300mA CMOS LDO
8
AME, Inc.
AME8800 / 8811 300mA CMOS LDO
n Ordering Information
Please consult AME sales office or authorized Rep./Distributor for other output voltage and package typeavailability.
9
AME, Inc.
AME8800 / 8811 300mA CMOS LDO
ESD Classification B
Junction Temperature o
-40 to +125 C
Caution: Stress above the listed absolute rating may cause permanent damage to the device
10
AME, Inc.
AME8800 / 8811 300mA CMOS LDO
n Thermal Information
SOT-23 110
SOT-25 81
o
Thermal Resistance (θjc ) C/W
SOT-89 38
TO-92 80
SOT-23 325
SOT-25 260
o
Thermal Resistance (θja) C/W
SOT-89 180
TO-92 180
SOT-23 300
SOT-25 380
Internal Power Dissipation (PD)
o
SOT-89 550 mW
(∆ T = 100 C)
SOT-89 2750*
TO-92 625
o
Maximum Junction Temperature 150 C
Maximum Lead Temperature ( 10 Sec) o
300 C
* With heat sink capable of twice times the θjc
Caution: Stress above the listed absolute rating may cause permanent damage to the device
11
AME, Inc.
AME8800 / 8811 300mA CMOS LDO
n Electrical Specifications
TA = 25 o C unless otherwise noted
Parameter Symbol Test Condition Min Typ Max Units
Input Voltage VIN Note 1 7 V
Output Voltage Accuracy VO IO=1mA -1.5 1.5 %
1.4V<VO(NOM)<=2.0V 1300
IO=300mA See
Dropout Voltage VDROPOUT 2.0V<VO(NOM)<=2.8V 400 mV
VO=VONOM -2.0% chart
2.8V<VO(NOM) 300
Output Current IO VO>1.2V 300 mA
Current Limit ILIM VO>1.2V 300 450 mA
Short Circuit Current ISC VO<0.8V 150 300 mA
Quiescent Current IQ IO=0mA 30 50 µA
Ground Pin Current IGND IO=1mA to 300mA 35 µA
IO=1mA VO < 2.0V -0.15 0.15
Line Regulation REGLINE VIN=VO+1 to 2.0V<=VO < 4.0V -0.1 0.02 0.1 %
VO+2 4.0V <= Vo -0.4 0.2 0.4
Load Regulation REGLOAD IO=1mA to 300mA -1 0.2 1 %
Over Temerature Shutdown OTS 150 o
C
Over Temerature Hysterisis OTH 30 o
C
VO Temperature Coefficient TC 30 ppm/oC
f=1kHz 50
IO=100mA
Power Supply Rejection PSRR f=10kHz 20 dB
CO=2.2µF
f=100kHz 15
f=10Hz to 100kHz
Output Voltage Noise eN Co=2.2µF 30 µVrms
IO=10mA
Note1:VIN(min)=VOUT+VDROPOUT
12
AME, Inc.
AME8800 / 8811 300mA CMOS LDO
13
AME, Inc.
AME8800 / 8811 300mA CMOS LDO
Vo(5mV/DIV)
40 C L =2.2µF
Output
C I N =2.2µF
µA)
35 85 O C
Ground Current (µ
30
25
25 O C
20
IL(200mA/DIV)
15
10 IL o a d
5
0 0
0 1 2 3 4 5 6 7 8 TIME( 20mS/DIV)
Input Voltage (V)
Drop Out Voltage vs Output Voltage Drop Out Voltage vs Load Current
300 250
Top to bottom
V O U T =2.5V
Drop Out Voltage (mV)
250
200
Dropout Voltage (mV)
V O U T =2.8V
V O U T =3.0V
200 IL O A D = 3 0 0 m A V O U T =3.3V
150
V O U T =3.5V
150 V O U T =3.8V
IL O A D = 2 0 0 m A
100
100
IL O A D = 1 0 0 m A
50
50
0 0
2.5 2.75 3 3.25 3.5 3.75 4 0 50 100 150 200 250 300
Output Voltage (V) Load Current (mA)
R L O A D =100Ω
-10
R S H O R T =0.1Ω
C L =2.2µF Tantalum 100mA
-20
C B Y P =0
PSRR (dB)
-30
-40 0
-50
VOUT (1V/DIV)
100mA 10mA
-60
1mA
-70
100 µA 100 µA
-80
0
1.0E+01 1.0E+03 1.0E+05 1.0E+07 TIME (2mS/DIV)
Frequency (Hz)
14
AME, Inc.
AME8800 / 8811 300mA CMOS LDO
Overtemperature Shutdown
Current Limit Response
I OUT (200mA/DIV)
IOUT (200mA/DIV)
R L O A D =3.3Ω
0 0
R L O A D =6.6Ω
VOUT (1V/DIV)
VOUT (1V/DIV)
0 0
TIME (0.5Sec/DIV) TIME (2mS/DIV)
VIN DC = 5.0V
CL = 2.2µF
Vo (1mV/ DIV)
NO FILTER CL = 2.2µF
VO (1mV/DIV)
TIME (2mS/DIV)
TIME (20mS/DIV)
75 O C rise SOT-223
DPAK-2
Ω)
ESR (Ω
10 Stable Region 10 Stable Region
1 1
0.1 0.1
Untested Region
Untested Region
0.01 0.01
0 50 100 150 200 0 50 100 150 200
ILOAD (mA) ILOAD (mA)
10
ESR (Ω
Stable Region
Ω)
ESR (Ω
10 Stable Region 1
1 0.1
0.1 0.01
Untested Region
Untested Region 0.001
0.01
0 50 100 150 200
0 50 100 150 200
ILOAD (mA)
ILOAD (mA)
16
AME, Inc.
AME8800 / 8811 300mA CMOS LDO
35 220
(mV)
31 180
30 170
29
160
28
150
27 -45 -5 25 55 85
-45 -5 25 55 85
Temperature (0C) Temperature (0C)
0.54
0.52
0.50
0.48
0.46
0.44
0.42
0.40
-45 -5 25 55 85
0
Temperature ( C)
17
AME, Inc.
AME8800 / 8811 300mA CMOS LDO
n Package Dimension
SOT-23
SOT-25
MILLIMETERS INCHES
SYMBOLS
MIN MAX MIN MAX
A 1.00 1.45 0.0394 0.0571
A1 0.00 0.15 0.0000 0.0591
A2 0.70 1.25 0.0276 0.0492
b 0.35 0.55 0.0138 0.0217
C 0.08 0.25 0.0031 0.0098
D 2.70 3.10 0.1063 0.1220
E 1.40 1.80 0.0551 0.0709
e 1.90 BSC 0.07480 BSC
H 2.60 3.00 0.1024 0.1181
L 0.30 - 0.0118 -
θ1
° ° ° °
0 10 0 10
S1 0.85 1.05 0.0335 0.0413
18
AME, Inc.
AME8800 / 8811 300mA CMOS LDO
n Package Dimension
SOT-89
MILLIMETERS INCHES
S YMB OLS
MIN MAX MIN MAX
A 1.40 1.60 0.0551 0.0630
A1 0.89 - 0.0350 -
b 0.36 0.52 0.0142 0.0205
b1 0.41 0.56 0.0161 0.0220
C 0.35 0.44 0.0138 0.0173
D 4.40 4.60 0.1732 0.1811
D1 1.35 1.83 0.0531 0.0720
HE - 4.25 - 0.1673
E 2.29 2.60 0.0902 0.1024
e 2.90 3.10 0.1142 0.1220
H 0.35 0.70 0.0138 0.0276
S1 1.40 1.60 0.0551 0.0630
TO-92
MILLIMETERS INCHES
SYMBOLS
MIN MAX MIN MAX
A 4.32 4.95 0.170 0.195
b 0.36 0.51 0.014 0.020
E 3.30 3.94 0.130 0.155
e 2.41 2.67 0.095 0.105
e1 1.14 1.40 0.045 0.055
L 12.70 15.49 0.500 0.610
R 2.16 2.41 0.085 0.095
S1 1.14 1.52 0.045 0.060
W 0.41 0.56 0.016 0.022
D 4.45 4.95 0.175 0.195
a 4° 6° 4° 6°
NOTE:
1. PACKAGE OUTLINE EXCLUSIVE OF ANY MOLD FLASHES
DIMENSION
2. PACKAGE OUTLINE EXCLUSIVE OF BURR DIMENSION
19
www.ame.com.tw
E-Mail: info@ame.com.tw