Electronics 1 (Electronics Devices and Circuits)
Module No. : 03
Topic/s : Diode Equivalent Circuits
LEARNING OUTCOMES
At the end of this module, the student should be able to:
discuss the fundamental principles of semiconductor diodes
analyze and solve various diode circuits
INTRODUCTION
Semiconductor diode is considered the simplest among the semiconductor components because it is composed a
single p-type material and a single n-type material fused together. Conventional diodes are primarily used for
rectification and switching and just like any other passive components in circuits, its behavior varies depending on
conditions and constructions of circuits it is connected. The p-n junction diode or simply diode is a two terminal
electronic component that allows current to flow easily in one direction and is composed of a p and an n-type
material fused together. The two terminals are the anode (connected to the p-type material) and cathode
(connected to the n-type material). It is the basic tool for rectification in the building of DC power supplies.
(a) (b) (c)
(a) construction (b) schematic symbol (c) example
DISCUSSION
PN Junction Diode Parameters
A typical diode datasheet will contain figures for the following parameters:
Maximum repetitive reverse voltage (VRRM) – the maximum amount of voltage the diode can withstand in
reverse bias mode, in repetitive pulses.
Maximum DC reverse voltage (VR or VDC) – the maximum amount of voltage the diode can withstand in
reverse bias mode on a continual basis.
Maximum forward voltage (VF) – usually specified at the diode’s rated forward current.
Maximum (average) forward current (I F(AV)) – the maximum average amount of current the diode is able to
conduct in forward bias mode.
Maximum (peak or surge) forward current (IF(SM) or IF(surge)) – the maximum peak amount of current the
diode is able to conduct in forward bias mode.
Maximum total dissipation (PD) – the amount of power allowable for the diode to dissipate.
Operating junction temperature (TJ) – the maximum allowable temperature for the diode’s p-n junction.
Storage temperature range (TSTG) –the range of allowable temperatures for storing a diode.
Thermal resistance (RÈ) – the temperature difference between junction and outside air or between junction
and leads.
Engr. Jayson Paul V. Vicencio, EcE, EcT
jvvicencio@wesleyan.edu.ph
College of Engineering and Computer Technology
Wesleyan University – Philippines
Page | 1
Electronics 1 (Electronics Devices and Circuits)
Module No. : 03
Topic/s : Diode Equivalent Circuits
Maximum reverse current (IR) – the amount of current through the diode in reverse bias condition, with the
maximum rated inverse voltage applied. Sometimes referred to as leakage current.
Typical junction capacitance (CJ) – the typical amount of capacitance intrinsic to the junction, due to the
depletion region acting as a dielectric separating the anode and cathode connections.
Reverse recovery time (RT) – the amount of time it takes for a diode to turn off when the voltage across it
alternates from forward bias to reverse bias polarity.
The Shockley’s Diode Equation
The general characteristics of a semiconductor diode can be defined by the following equation referred to as the
Shockley’s equation.
I =I ( e )
VD
nV T
D S −1
where:
I B=diode current
V D=applied forward bias voltage
V T =thermal voltage
I S=reverse saturation current
N=Ideality factor :1 for≥¿ 2 for Si
The thermal voltage VT is defined by:
kT
V T=
q
where:
−23
k =Boltzmann ’ s constant :1.38 x 10 J / K
t=absolute temperature∈Kelvin
−19
q=magnitude of electronic charge :1.6 x 10 C
Example:
At a temperature of 27 ℃ (common temperature for components in an enclosed operating system), determine the
thermal voltage V T .
Solution:
T =273+℃
T =273+27 ℃
T =300 K
kT
V T=
q
Engr. Jayson Paul V. Vicencio, EcE, EcT
jvvicencio@wesleyan.edu.ph
College of Engineering and Computer Technology
Wesleyan University – Philippines
Page | 2
Electronics 1 (Electronics Devices and Circuits)
Module No. : 03
Topic/s : Diode Equivalent Circuits
( 1.38× 10−23 J / K ) (300 K )
V T= −19
1.6 × 10 C
V T =25.875 mV
Answer: The thermal voltage is 25.875 mV .
Example:
Using the computed thermal voltage, determine the current across the Silicon diode if the applied voltage is 0.5 V
and the reverse saturation current is equal to 1 nA .
Solution:
( )
VD
nV T
I D =I S e −1
A ) [e ]
0.5 V
I D =( 1 ×10
−3
−9 ( 2 ) ( 25.875× 10 V )
−1
I D =15.706 μA
Answer: The diode current is 15.706 μA .
Example:
Determine the temperature of the Germanium diode with applied voltage of 0.6 V , diode current of 0.2 A , and
saturation current of 1 nA .
Solution:
( )
VD
nV T
I D =I S e −1
[ ]
0.6 V
0.2 A=( 1× 10 A ) e −9 ( 1) V T
−1
0.6 V
0.2 A VT
=e −1
1× 10−9 A
0.6 V
0.2 A VT
+ 1=e
1× 10−9 A
) (
0.6 V
ln
( 0.2 A
1 ×10 A−9
+1 =ln e
V
) T
ln( 0.2 A
1 ×10 A−9
+1 =
0.6 V
VT )( )
ln e
0.6 V
V T=
ln
( 0.2 A
1× 10−9 A
+1
)
V T =31.391 mV
kT
V T=
q
−3 ( 1.38 ×10−23 J / K ) T
31.391 ×10 V = −19
1.6 ×10 C
Engr. Jayson Paul V. Vicencio, EcE, EcT
jvvicencio@wesleyan.edu.ph
College of Engineering and Computer Technology
Wesleyan University – Philippines
Page | 3
Electronics 1 (Electronics Devices and Circuits)
Module No. : 03
Topic/s : Diode Equivalent Circuits
( 31.391× 10−3 V ) ( 1.6 ×10−19 C )
−23
=T
1.38 ×10 J/ K
T =363.954 K
Answer: The temperature is 363.954 K .
Diode Approximation Models
1. Ideal Diode Model ON OFF
Condition/s: Condition/s:
Forward biased Reverse biased
2. Real Diode Model Condition/s: Condition/s:
Forward biased, VIN ≥ VK Reverse biased
Forward biased, VIN ≥ VK
Diode Circuit Analysis
Example:
For the following circuit below, determine current ID, IR, and VOUT, using ideal and real diode assumptions.
Engr. Jayson Paul V. Vicencio, EcE, EcT
jvvicencio@wesleyan.edu.ph
College of Engineering and Computer Technology
Wesleyan University – Philippines
Page | 4
Electronics 1 (Electronics Devices and Circuits)
Module No. : 03
Topic/s : Diode Equivalent Circuits
(a) (b)
Solution:
(a)
Using ideal diode approximation:
Diode is forward biased, diode is ON.
5 V −I ( 3.3 kΩ )=0
I ( 3.3 kΩ )=5 V
5V
I=
3.3 kΩ
I =1.515 mA
I =I R =I D
I R =1.515 mA
I D =1.515 mA
5 V −I ( 3.3 kΩ )=V OUT
V OUT =5V −( 1.515 mA ) ( 3.3 kΩ )
V OUT =0 V
Using real diode approximation:
5 V −I ( 3.3 kΩ )−0.7 V =0
I ( 3.3 kΩ )=5 V −0.7 V
Engr. Jayson Paul V. Vicencio, EcE, EcT
jvvicencio@wesleyan.edu.ph
College of Engineering and Computer Technology
Wesleyan University – Philippines
Page | 5
Electronics 1 (Electronics Devices and Circuits)
Module No. : 03
Topic/s : Diode Equivalent Circuits
5V −0.7 V
I=
3.3 kΩ
I =1.303 mA
I =I R =I D
I R =1.303 mA
I D =1.303 mA
5 V −I ( 3.3 kΩ )=V OUT
V OUT =5V −( 1.303 mA ) ( 3.3 kΩ )
V OUT =0.7 V
(b)
Using ideal diode approximation:
Diode is reverse biased, diode is OFF.
I =0 A , open circuit
I =I R =I D
I R =0 A
I D =0 A
5 V −I ( 3.3 kΩ )=V OUT
V OUT =5V −( 0 A ) ( 3.3 kΩ )
V OUT =5V
The computations are the same for real diode approximation.
Example:
For the following circuit below, determine:
a. total current
b. current on the diodes
c. current on the resistors
d. voltage drops on the resistors
e. voltage output
Solution:
(a)
D1 is ON.
Engr. Jayson Paul V. Vicencio, EcE, EcT
jvvicencio@wesleyan.edu.ph
College of Engineering and Computer Technology
Wesleyan University – Philippines
Page | 6
Electronics 1 (Electronics Devices and Circuits)
Module No. : 03
Topic/s : Diode Equivalent Circuits
D2 is ON.
I =I R 1 + I R 2
10 V −0.7 V −( I R 1 ) 3.3 kΩ−0.7 V =0
( I R 1 ) 3.3 kΩ=10V −0.7 V −0.7 V
10 V −0.7V −0.7 V
I R 1=
3.3 kΩ
I R 1=2.606 mA
10 V −0.7 V −( I R 2 ) 2.2 kΩ=0
( I R 2) 2.2 kΩ=10 V −0.7 V
10 V −0.7V
I R 2=
2.2 kΩ
I R 2=4.227 mA
I =I R 1 + I R 2
I =2.606 mA + 4.227 mA
I =6.833 mA
(b)
I D 1 =I
I D 1 =6.833 mA
I D 2 =I R 1
I D 2 =2.606 mA
(c)
I R 1=2.606 mA
I R 2=4.227 mA
(d)
V R 1=I R 1 R 1
V R 1=( 2.606 mA ) ( 3.3 kΩ )
V R 1=8.6 V
V R 2=I R 2 R2
V R 2=( 4.227 mA ) (2.2 kΩ )
V R 2=9.3 V
(e)
V OUT =9.3 V
Engr. Jayson Paul V. Vicencio, EcE, EcT
jvvicencio@wesleyan.edu.ph
College of Engineering and Computer Technology
Wesleyan University – Philippines
Page | 7
Electronics 1 (Electronics Devices and Circuits)
Module No. : 03
Topic/s : Diode Equivalent Circuits
Example:
For the following circuit below, determine the currents on the diodes and the output voltage.
Solution:
Ge is ON. Si is OFF.
I Si =0 A
10 V −I ( 2 kΩ )−0.3 V −I ( 5 kΩ )=0
10V −0.3 V
I=
2 kΩ+5 kΩ
I =1.386 mA
I =I ¿
I ¿=1.386 mA
10 V −I ( 2 kΩ )−0.3 V =V OUT
V OUT =10V −( 1.386 mA ) ( 2 kΩ )−0.3 V
V OUT =6.929 V
Diode Test
Open Circuit Test
Replace the diode with an open circuit. If (V A – VK) ≥ VD, the diode is ON. Otherwise, the diode is OFF. For
several diodes, the one with higher (VA – VK) turns ON first, and repeat the test for other diodes.
Short Circuit Test
Replace the diode with a short circuit. Assume current direction, if I D > 0 A, the diode is ON. If ID ≤ 0 A, diode id
OFF.
Engr. Jayson Paul V. Vicencio, EcE, EcT
jvvicencio@wesleyan.edu.ph
College of Engineering and Computer Technology
Wesleyan University – Philippines
Page | 8
Electronics 1 (Electronics Devices and Circuits)
Module No. : 03
Topic/s : Diode Equivalent Circuits
Example:
For the following network, determine the currents using diode tests.
Solution:
Using open circuit test:
V A =12V ( 1 Ω+3
3Ω
Ω)
V A =9 V
V K =12 V ( 4 Ω+2
2Ω
Ω)
V K =6 V
V A −V K ≥ 0.7 V
9 V −6 V ≥ 0.7 V
3 V ≥0.7 V
Diode is ON.
Engr. Jayson Paul V. Vicencio, EcE, EcT
jvvicencio@wesleyan.edu.ph
College of Engineering and Computer Technology
Wesleyan University – Philippines
Page | 9
Electronics 1 (Electronics Devices and Circuits)
Module No. : 03
Topic/s : Diode Equivalent Circuits
Using mesh current analysis:
12 V −4 Ω ∙ ( I A −I B )−2 Ω∙ ( I A −I C )=0
−4 Ω I A + 4 Ω I B −2 Ω I A +2 Ω I C =−12V
−6 Ω I A +4 Ω I B+ 2 Ω I C =−12 V equation 1
4 Ω ∙ ( I A −I B )−1 Ω I B−0.7 V =0
4 Ω I A −4 Ω I B −1 Ω I B =0.7 V
4 Ω I A −5 Ω I B=0.7 V equation 2
2 Ω ∙ ( I A −I C ) + 0.7 V −3 Ω I C =0
2 Ω I A −2 Ω I C −3 Ω I C =−0.7 V
2 Ω I A −5 Ω I C =−0.7 V equation 3
I A=5.86 A
I B=4.548 A
I C =2.484 A
I 1 Ω=I B
I 1 Ω=4.548 A
I 2 Ω=I A−I C
I 2 Ω=5.86 A−2.484 A
I 2 Ω=3.376 A
I 3 Ω=I C
I 3 Ω=2.484 A
I 4 Ω =I A −I B
I 4 Ω =5.86 A−4.548 A
I 4 Ω =1.312 A
Engr. Jayson Paul V. Vicencio, EcE, EcT
jvvicencio@wesleyan.edu.ph
College of Engineering and Computer Technology
Wesleyan University – Philippines
Page | 10
Electronics 1 (Electronics Devices and Circuits)
Module No. : 03
Topic/s : Diode Equivalent Circuits
I D =I B−I C
I D =4.548 A−2.484 A
I D =2.064 A
Using short circuit test:
R A =4 Ω∨¿ 1 Ω
4 Ω∙ 1 Ω
RA=
4 Ω+1 Ω
R A =0.8 Ω
R B=2 Ω∨¿ 3 Ω
2 Ω∙ 3 Ω
R B=
2 Ω+ 3 Ω
R B=1.2 Ω
V A =12V ( 0.8 0.8
Ω+ 1.2 Ω )
Ω
V A =4.8 V
V B=7.2 V
VA
I 4Ω=
2Ω
4.8 V
I 4Ω=
4Ω
I 4 Ω =1.2 A
VB
I 2 Ω=
2Ω
7.2V
I 2 Ω=
2Ω
Engr. Jayson Paul V. Vicencio, EcE, EcT
jvvicencio@wesleyan.edu.ph
College of Engineering and Computer Technology
Wesleyan University – Philippines
Page | 11
Electronics 1 (Electronics Devices and Circuits)
Module No. : 03
Topic/s : Diode Equivalent Circuits
I 2 Ω=3. 6 A
I 2 Ω=I 4 Ω + I D
I D =I 2 Ω−I 4 Ω
I D =3. 6 A−1.2 A
I D =2.4 A
I D > ¿ 0 A, diode is ON.
Computation on currents is the same as above.
BEYOND THE LESSON: THOUGHTS FOR SELF-REFLECTION
“In Jerusalem he made machines, invented by skillful men, to be on the towers and the corners, to shoot arrows
and great stones. And his fame spread far, for he was marvelously helped, till he was strong.”
2 Chronicles 26:15
REFERENCES
Boylestad, Robert. (2013). Semiconductor Diodes. Electronics Device and Circuits Theory. (11 th edition, Chapter
30, pp. 55-67). Upper Saddle River, New Jersey: Pearson Publication, Inc.
Engr. Jayson Paul V. Vicencio, EcE, EcT
jvvicencio@wesleyan.edu.ph
College of Engineering and Computer Technology
Wesleyan University – Philippines
Page | 12
