CHAPTER 4: BIPOLAR JUNCTION TRANSISTORS (BJTs)

Chapter Outline

4.1 Device Structure and Physical Operation

4.2 Current-Voltage Characteristics
4.3 The BJT as an Amplifier and as a Switch
4.4 BJT Circuits at DC
4.5 Biasing in BJT Amplifier Circuits
4.6 Small-Signal Operation and Models
4.7 Single-Stage BJT Amplifiers
4.8 The Basic BJT Digital Logic Inverter

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 W. Shockley

J. Bardeen

First BJT was invented in 1947 by W. Shockley, J. Bardeen and W. H.

Brattain in Bell lab, USA. W. H. Brattain

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Microphone
amplifier

Temperature
sensor amplifier

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 NOR Gate

Integrated Circuit

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4.1 DEVICE STRUCTURE AND PHYSICAL OPERATION

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 Remind:
- Diffusion current
- Drift current

- +
- +

Emitter injection efficiency 𝛾 = 𝑖𝐸𝑛 Τ(𝑖𝐸𝑛 + 𝑖𝐸𝑝 )

Base transport factor 𝛼 𝑇 = 𝑖𝐶𝑛 Τ𝑖𝐸𝑛
Common-base current gain α = 𝑖𝐶𝑛 Τ𝑖𝐸 = 𝛾𝛼 𝑇 < 1

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 Collector current iC  iCn = I S eVBE / VT
iC
Base current iB =


Emitter current

Current gain

Common-emitter current gain

 =  / (1 −  )
Ground
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 Equivalent Circuit Model

iB
B C
𝑣𝐵𝐸
ൗ𝑛𝑉
𝑖𝐶 = 𝐼𝑆 𝑒 𝑇 = 𝛼𝐼𝐸 = 𝐼𝑆
iB 𝑖𝐶 = 𝛽𝑖𝐶
𝐼𝑆 /𝛽 DB
B
+
vBE DE iE
-
𝑖𝐸 = 𝑖𝐶 + 𝑖𝐵 = 𝛽 + 1 𝑖 𝐵 E
= 𝑖𝐶 Τ𝛼 = 𝐼𝑆 /𝛼
E

π- Model
T- Model
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+ - + -

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 iB

ic

IE = IC + IB

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Collector current
iC  iCn = I S eVEB / VT
iC
iB =
Base current


Emitter current

Current gain

Common-base current gain Common-Emitter current gain

 =  / (1 −  )

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Equivalent Circuit Model

𝑖𝐸 = 𝑖𝐶 + 𝑖𝐵 = 𝛽 + 1 𝑖𝐵
+ = 𝑖𝐶 Τ𝛼 = 𝐼𝑆 /𝛼
vEB DE E
-
iB iE
B
+ 𝑣𝐸𝐵
ൗ𝑛𝑉
𝑖𝐶 = 𝐼𝑆 𝑒 𝑇 = 𝛼𝐼𝐸 = 𝐼𝑆
vEB 𝐼 /𝛽 DB
𝑆
𝑣𝐵𝐸 -
ൗ𝑛𝑉
𝑖𝐶 = 𝐼𝑆 𝑒 𝑇 = 𝛼𝐼𝐸 = 𝐼𝑆 iB
B C

T- Model π- Model
 4.2 CURRENT-VOLTAGE CHARACTERISTICS

Summary of the BJT current – voltage relationship in the active mode

𝑣𝐸𝐵
ൗ𝑉
𝑣𝐵𝐸 𝑖𝐸 = 𝑖𝐶 + 𝑖𝐵 𝑖𝐶 = 𝐼𝑆 𝑒 𝑇
ൗ𝑉
𝑖𝐶 = 𝐼𝑆 𝑒 𝑇

𝛽
𝛼= 𝑣𝐸𝐵
ൗ𝑉
𝑣𝐵𝐸
ൗ𝑉 𝛽+1 𝑖𝐶 𝐼𝑆 𝑒 𝑇
𝑖𝐶 𝐼𝑆 𝑒 𝑇 𝑖𝐵 = =
𝑖𝐵 = = 𝛽 𝛽
𝛽 𝛽 𝛼
𝛽=
1−𝛼
𝑣𝐵𝐸 𝑣𝐸𝐵
ൗ𝑉 ൗ𝑉
𝑖𝐶 𝐼𝑆 𝑒 𝑇 𝑖𝐶 𝐼𝑆 𝑒 𝑇
𝑖𝐸 = = 𝑖𝐸 = =
𝛼 𝛼 𝛼 𝛼
Common-Emitter Output Characteristics (I)

Early Effect
Common-Emitter Output Characteristics (II)
 ICsat

βIB

ICsat

VCEoff V
18 CEsat
VCEsat
iC

∆iC

∆vCE vCE

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Example: β = 100, VLED = 1.7V. Find IC and VC

Ans: IB = (9 – 0.7)/100K = 8.3 X 10-2 mA

IC = IB.100 = 8.3 mA
VC = 9 – 8.3 x 0.68 - 1.7 = 1.656V
R = 100KΩ

Example: β = 100, VLED = 1.7V. Find R to obtain

transistor saturation
Ans: Icsat = (9 – 1.7 – 0.2)/680 = 10.44 mA
𝐼
𝛽𝑓𝑜𝑟𝑐𝑒 ≪ 𝛽 𝑜𝑟 𝑐𝑠𝑎𝑡 ≪ 100, choose
𝐼𝐵
IB = Icsat/10 = 1.044 mA
R = (9 – 0.7)/IB = 7.95 K