Shendi University
Faculty of Engineering & Architecture
Department of Electrical and Electronic Engineering
EEE 301
Analog Electronic Circuits II
Lecture 2
Bipolar Junction Transistors (BJTs)
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Lecture Outline
❑ Introduction
❑ Bipolar Junction Transistor (BJT)
❑ Mode of operations
❑ BJT as Switch
❑ BJT as Amplifier
❑ BJT Modeling and AC Equivalent Circuit
❑ Practice Problems
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Introduction
❑Guglielmo Marconi invents radio in 1895
❑Problem: For long distance travel, signal must be
amplified
❑Lee De Forest improves on Fleming’s original vacuum
tube to amplify signals
❑Made use of third electrode
❑Too bulky for most applications
❑Beside diodes, the most popular semiconductor
devices is transistors. Eg: Bipolar Junction Transistor
(BJT).
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Introduction
❑ Few most important applications of transistor are: as
an amplifier as an oscillator and as a switch.
❑ Amplification can make weak signal strong in
general, provide function called Gain.
❑ BJT is bipolar because both holes (+) and electrons
(-) will take part in the current flow through the
device
❑ N-type regions contains free electrons (negative
carriers).
❑ P-type regions contains free holes (positive
carriers)
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Bipolar Junction Transistor (BJT)
❑ BJT is a 3 terminal device namely- emitter, base and
collector
❑ npn transistor: emitter & collector are n-doped and base is p-
doped.
❑ Emitter is heavily doped, collector is moderately doped and
base is lightly doped and base is very thin. i.e. NDE >> NDC
>> NAB
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Bipolar Junction Transistor (BJT)
Basic circuits of BJT
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Bipolar Junction Transistor (BJT)
Basic circuits of BJT
✓ Transistor Currents: IE = IC + IB
✓ alpha (DC) IC = DCIE
✓ beta (DC) IC = DCIB
DC typically has a value between 20 and 200
✓ DC voltages for the biased transistor:
✓ Collector voltage VC = VCC - ICRC
✓ Base voltage VB = VE + VBE
– for silicon transistors, VBE = 0.7 V
– for germanium transistors, VBE = 0.3 V
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Bipolar Junction Transistor (BJT)
Q-point
❑The base current, IB,
is established by
the base bias
❑The point at which
the base current
curve intersects the
dc load line is the
quiescent or Q-
point for the circuit
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Bipolar Junction Transistor (BJT)
iE = iC + iBvCE = vCB + vBE
iC = i E iC = iB
iB = (1 − ) iE = E
i
+1
iE = ( + 1) iB
= =
+1 1−
CUTOFF ACTIVE SATURATION
vBE < 0.7 V vBE = 0.7 V vBE = 0.7 V
NPN i C = i B = iE = 0 V vC vB vC < vB
vEB < 0.7 V vEB = 0.7 V vEB = 0.7 V
PNP i C = i B = iE = 0 V vB vC vB < vC
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Bipolar Junction Transistor (BJT)
Characteristics
❑ Current Gain:
✓ α is the fraction of electrons that diffuse across the narrow
Base region
✓ 1- α is the fraction of electrons that recombine with holes in
the Base region to create base current
❑ The current Gain is expressed in terms of the β (beta) of the
transistor .
❑ β (beta) is Temperature and Voltage dependent.
❑ It can vary a lot among transistors (common values for signal
BJT: 20 - 200).
I C = I E
I B = (1 − ) I E
IC
= =
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Bipolar Junction Transistor (BJT)
Input Characteristics
❑ The Input Characteristic is the base emitter current IBE against
base emitter voltage VBE
❑ IBE/VBE shows the input Conductance of the transistor.
❑ The increase in slope of when the VBE is above 1 volt shows that the
input conductance is rising
❑ There is a large increase in current for a very small increase in VBE.
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Bipolar Junction Transistor (BJT)
Output Characteristics
❑ collector current (IC) is nearly independent of the collector-
emitter voltage (VCE), and instead depends on the base current
(IB)
IB4
IB3
IB2
IB1
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Mode of operation for BJT
Forward active region is widely used and Reverse
active region is rarely used.
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BJT as Amplifier
❑ An amplifier is a circuit which magnify (amplify) the input
signal.
❑Characteristics of an amplifiers:
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BJT as Amplifier
Simple BJT Amplifier Configuration
❑Although the BJT converts an input voltage signal to an output
current signal, an (amplified) output voltage signal can be
obtained by connecting a “load” resistor (with resistance RL) at
the output and allowing the controlled current to pass through it.
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BJT as Amplifier
Example 2-1
Let Gain, β = 100
prove that the operation is in active region →VBE=0.7V
VBE = 0.7V
I E = I B + I C = ( + 1) I B
VBB − VBE 5 − 0 .7
IB = = = 0.0107mA
RB + RE *101 402
I C = * I B = 100 * 0.0107 = 1.07mA
VCB = VCC − I C * RC − I E * RE − VBE =
= 10 − (3)(1.07) − (2)(101* 0.0107) − 0.7 =
= 3.93V
VCB>0 so the BJT is in active region
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BJT as Amplifier
Example 2-2
An NPN Transistor has a DC base bias voltage, 𝑉𝐵 of 10V
and an input base resistor, 𝑅𝐵 of 100kΩ. What will be the
value of the base current into the transistor.
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BJT as Amplifier
Example 2-3
Using the transistor values: β = 200, 𝐼𝐶 = 4mA and 𝐼𝐵 = 20µA,
find the value of the Base resistor (𝑅𝐵 ) required to switch the load
"ON" when the input terminal voltage exceeds 2.5v.
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BJT Modeling and AC Equivalent Circuit
❑The key to the transistor small-signal analysis is the use of ac
equivalent circuits or models.
❑ A model is the combination of circuit elements, properly
chosen, that best approximates the actual behavior of a
semiconductor device (BJT) under specific operating
conditions.
❑Once the AC equivalent circuit has been determined, the
graphical symbol of the device can be replaced in the
schematic by this circuit and the basic methods of AC circuit
analysis (mesh analysis, nodal analysis, and Thevenin's
theorem) can be applied to determine the response of the
circuit.
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BJT Modeling and AC Equivalent Circuit
Hybrid 𝝅 Model
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BJT Modeling and AC Equivalent Circuit
Hybrid 𝝅 Model
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BJT Modeling and AC Equivalent Circuit
Hybrid 𝝅 Model- Small-signal voltage gain
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BJT Modeling and AC Equivalent Circuit
Hybrid 𝝅 Model- Input and output resistances
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BJT Modeling and AC Equivalent Circuit
Example 2-4
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BJT Modeling and AC Equivalent Circuit
Example 2-4
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Practice Problems
1. An NPN Transistor has a DC base bias voltage, 𝑉𝐵 of 12V
and an input base resistor, 𝑅𝐵 of 102kΩ. What will be the
value of the base current into the transistor.
2. For Transistor below, the small signal voltage gain 𝐴𝑣 , input
resistance and output resistance at 300K.
Assume that the BJT and
circuit parameters are:
β = 120
𝑉𝐵𝐸 = 0.7𝑉
𝑉𝐶𝐶 = 12𝑉
𝑅𝐶 = 4.8 kΩ
𝑉𝐵𝐵 = 1.4V
𝑅𝐵 = 54 𝐾Ω
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Thank You
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