Analog CMOS

Integrated Circuit
Chen Xiaofei

1
 Chapter 2
Basic MOS Device Physics
Chen Xiaofei

2
 Lecture 2-2
Small signal Model
Chen Xiaofei

3
 Content
 General Consideration
 I/V Characteristics
 Second-Order Effects
 Small signal Model
 MOS Device Capacitance
 Comparison of MOS and BJT

Chen Xiaofei CMOS Chapter 2 4

 NMOS device IV characteristics
1 nCox W 2
ID = nC
ox
W
[(VGS − VTH )VDS − VDS ] ID =
2
(V GS − VTH )
L
2 2 L
ID
Triode Region or Active Region or
Linear Region Saturation Region
VGS3

VGS2

VGS1

VDS
VGS1-VTH

VGS3-VTH
VGS2-VTH

Keep In Mind!
CMOS I
 Large Signal Model Summary

VDS nCox W
ID = 2
VOV ≈
2 L
ld
ho

Saturation Region VCCS

res

VOV
h

Triode Region
b-T

W 1 2  ≈
Su

ID = nCox VOVVDS − VDS 

L 2  R
VTH VGS

CMOS I
 One Way to Amplify
• Convert input voltage to current using voltage controlled
current source (VCCS)
• Convert back to voltage using a resistor (R)
• “Voltage gain” AV = △Vout/△Vin
• — Product of the V-I and I-V conversion
factor

Fig 2.24 First-Order MOS Large Signal Model

Chen Xiaofei CMOS Chapter 2 7

 Common Source Amplifier
• MOS device acts as VCCS

nCox W 2
ID = (V GS − VTH )
2 L

Fig 2.25 First-Order MOS Large Signal Model

nCox W nCox W
ID =
2
(V GS − VTH ) VO = VDD − (VGS − VTH ) 2 R
2 L 2 L

Chen Xiaofei CMOS Chapter 2 8

 Biasing
• Need some sort of "battery" that brings input voltage into useful
operating region
• Define VOV= VI -VTH ，"quiescent point gate overdrive"
-- VOV = VGS-VTH with no input signal applied

Fig 2.26 First-Order MOS Large Signal Model

Chen Xiaofei CMOS Chapter 2 9

 Understanding the concept of small signal
V vin V
VB
AC 0.2sin(wt) t
2
DC 2V -0.2
t
0
Bias
vin C=∞ Vin = VB + vin
Vin = ？
Signal
AC
0.2sin(wt) V
2.2
R=∞ 2.0 2
VB
DC 2V t
0

Chen Xiaofei CMOS Chapter 2 10

 Relationship Between Incremental Voltages
• What is ΔVo as a function of ΔVi?

• As expected, this is a nonlinear relationship

• Nobody likes nonlinear equations, we need a simpler model
– Fortunately, a linear approximation to the above expression
is sufficient for 90% of all analog circuit analysis

Chen Xiaofei CMOS Chapter 2 11

 Small Signal Approximation (1)

• Assuming ΔVi << 2VOV, we have

• If we further pretend that the input voltage increment is infinitely

small, we can find this result directly by taking the derivative of
the large signal transfer function at the "operating point" VI

Chen Xiaofei CMOS Chapter 2 12

 Small Signal Approximation (2)

• Graphical illustration:

Fig 2.27

• The slope of the above tangent is the so called "small signal

gain" of our amplifier

Chen Xiaofei CMOS Chapter 2 13

 Small Signal MOS Model

• Fortunately we don't have to repeat this analysis for every single circuit
• Instead, we derive a linearized circuit model for the MOS transistor and
plug it into arbitrary circuits

id
ID+id G D
M1 +
+ gmvgs
VDS+vds vgs
+ -
VGS+vgs - -
Conditions: S
VDS>VGS-VTH
Id vgs<<VGS-VTH
id
ID gm gm
vgs
VGS Vgs
CMOS I
 Transconductance ( gm ) in Active Region

• The parameter that relates small signal gate voltage to drain current
is called transconductance (gm),
• The transconductance is found by differentiating the large signal
I-V characteristic of the transistor in its operating point

nCox W
ID = (VGS − VTH ) 2
2 L
id ID W W
gm = = =  nCox (VGS − VTH ) =  nCox VOV …(2-19)
vgs VGS VDS cons tan t L L
2 ID
= 2 nC ox
W
ID = …(2-20)
L VOV

Chen Xiaofei CMOS Chapter 2 15

Transconductance ( gm ) in Active Region (cont.)

Fig.2.29 MOS transconductance as a function of overdrive and drain current

(2-19) suggests that gm increases with the overdrive if W/L is

constant whereas (2-20) implies that gm decreases with the
overdrive if ID is constant.

Chen Xiaofei CMOS Chapter 2 16

 Example 2.2

Ex.2.2 For the arrangement shown in Fig.2.30, plot the gm as a function of VDS.

Solution: It is simpler to study gm as

VDS decreases from infinity. So long
as VDS≥Vb-VTH, M1is in saturation, ID
is relatively constant, and, from
equation (2-18), so is gm. For
VDS<Vb-VTH, M1 is in triode region Fig 2.30
and,

 1 W W
gm = {  n cox [2(VGS − VTH )VDS − VDS ]} =  n cox VDS
2

VGS 2 L L
Thus, as plotted in Fig.2.20, the transconductance drops if the device enters
the triode region. For amplification, we usually employ MOS in saturation.

Chen Xiaofei CMOS Chapter 2 17

 Dependence of ID on VDS

• Admittedly, our simple first order MOS I-V equation for the forward
active region looks pretty unrealistic– Ideal current source!
• In reality, owing to channel-length modulation, the drain current has a
weak dependence on VDS

nCox W
ID  (VGS − VTH ) 2 (1 + VDS )
2 L

Chen Xiaofei CMOS Chapter 2 18

 Small Signal Output Resistance

• Yet, we must somehow take the finite dID/dVDS into account, since it
quantifies how much our forward active device deviates form an ideal current
source
• This effect can also be modeled by a voltage-dependent current source, but a
current source whose value linearly depends on the voltage across it is
equivalent to a linear resistor.
• Define "small signal output resistance" ro, or “small signal output
transconductancd” gds.

1 VDS
ro = =
gds I D

Chen Xiaofei CMOS Chapter 2 19

 Small Signal Output Resistance (cont.)

VDS 1 1 1
ro = = = 
ID ID / VDS nCox W (VGS − VTH ) 2  ID
2 L

1
g ds = =
1
ro =
VM l
ro VM l I DS

Chen Xiaofei CMOS Chapter 2 20

 Bulk Transconductance, gmb

• The bulk potential influences the threshold voltages and hence the
gate-source overdrive.
• This effect can be modeled by a current source connected between
D and S,

Chen Xiaofei CMOS Chapter 2 21

 Bulk Transconductance, gmb (cont.)

• We write the value as gmbvbs, where

ID nCox W  −V TH 

gmb = = (V GS − VTH )
V BS 2 L  V BS 

Also,
VTH − VTH 
= = − (2F + V SB )−1/ 2
V BS VSB 2


gmb = gm = gm  = g mb g
2 2F + V SB m

Chen Xiaofei CMOS Chapter 2 22

 1st Order Small Signal Model (Forward Active)

G D
+
vgs gmvgs ro gmbvbs
-
S -
vbs
+
B
Note:
When drawing small signal diagrams ,
(1) FIXED ( constant ) current source 􀀀 open
(2) FIXED ( constant ) voltage source 􀀀 short

Chen Xiaofei CMOS Chapter 2 23

 Content

 General Consideration
 I/V Characteristics
 Second-Order Effects
 Small signal Model
 MOS Device Capacitance
 Comparison of MOS and BJT

Chen Xiaofei CMOS Chapter 2 24

 MOS Device Capacitance

• We expect that a capacitance exists between every two of

the four terminals of a MOS, except the capacitance
between S and D.

Chen Xiaofei CMOS Chapter 2 25

 Gate terminal Capacitance

Chen Xiaofei CMOS Chapter 2 26

 Capacitance terminal Calculation

C1 C1 = Cox LW

 Cox
C2 = Cd LW = LW
C2 2 2 | F | −VBS

C3 C3 = WCOV

C4 C4 = WCOV

Chen Xiaofei CMOS Chapter 2 27

 Gate terminal capacitance in cut-off region

CGS CGS = WCOV

CGD CGD = WCOV

CGB CGB = (Cox // Cd ) LW

Chen Xiaofei CMOS Chapter 2 28

 Gate terminal capacitance in linear region

1
CGS CGS = WCOV + Cox LW
2
1
CGD CGD = WCOV + Cox LW
2

CGB 0

Chen Xiaofei CMOS Chapter 2 29

 Gate terminal capacitance in saturation region

2
CGS CGS = WCOV + Cox LW
3

CGD CGD = WCOV

CGB 0

Chen Xiaofei CMOS Chapter 2 30

 G-S and G-D Capacitance

Chen Xiaofei CMOS Chapter 2 31

 Substrate terminal capacitance

CBS = CBD = WEC j + 2(W + E )C jsw

Chen Xiaofei CMOS Chapter 2 32
 Layout for Low Capacitance

Chen Xiaofei CMOS Chapter 2 33

 MOS Small Signal Model with Capacitance

Chen Xiaofei CMOS Chapter 2 34

 Transit frequency fT of a MOSFET

• The transit frequency, fT , of a MOSFET is defined as the

frequency at which the small-signal current gain of the device
drops to unity while the source and drain terminals are held at
ac ground.

Chen Xiaofei CMOS Chapter 2 35

 fT (cont.)

ii = cGS svgs io = g mvgs

io gm gm
= = ;  =1 =1
ii cGS s cGSwT

gm W
fT = g m = Cox (VGS − VTH )
2 cGS L
3 
2
CGS  WLCox fT = (VGS − VTH )
3 4 L2

Chen Xiaofei CMOS Chapter 2 36

 Content

 General Consideration
 I/V Characteristics
 Second-Order Effects
 Small signal Model
 MOS Device Capacitance
 Comparison of MOS and BJT

Chen Xiaofei CMOS Chapter 2 37

 Characteristic curves
Saturation Saturation
IDS Triode IC Active

IB
VGS

Cut off
VGS  VTH Cut off
VDS VCE

• MOS：Triode , Saturation
• BJT: Saturation, Active

CMOS I
Small-signal model

CMOS I
 Comparison of Bipolar and MOS Transistors

• Bipolar devices have a higher gm than MOSFETs for a given

bias current.

CMOS I
 Class Exercise

➢ Which region ?

1V 1V 1V 3V 100uA
300K M1
R M1
M1 M1
100K 20K

CMOS I
 Homework 2-2

• 必做题: 2.2 2.5 (a) (c)

• 选做题: 2.16

Chen Xiaofei CMOS Chapter 2

 仿真作业 第二次
《深入浅出学习CMOS模拟集成电路》：1.2、1.3、1.4
、1.5、1.6节，选择两个做仿真。

Chen Xiaofei CMOS Chapter 2

 Summary

• General consideration
• MOS I/V characteristics
– Threshold Voltage
– I/V characteristics derivation
• Second-order effects
– Body effect
– Channel length modulation
– Sub-threshold conduction
– Complete small-signal model
• MOS small signal model
– Notations
– Understanding the concept of small signal
– Transconductance of MOS
– Ideal small signal model of MOS
Thank You!