Experiment No: 02
Experiment Name: To Study the Diode Characteristics
Objectives:
To study V-I characteristics of forward and reverse bias.
To find the cut-in voltage for Silicon P-N Junction diode.
To find static and dynamic (AC) resistance in both forward and reverse biased
conditions for P-N junction diode.
Apparatus Required:
Variable resistor (1KΩ)
Resistance (470Ω, 0.5W)
Silicon diode (1N4001)
Analog Ammeter (DC-mA)
Voltmeter (0–5V) / Oscilloscope
Trainer board (+15V, –15V)
Supply voltage (+15V for reverse bias)
Connecting wires
Theory:
A diode is a two-terminal electronic component that conducts current primarily in one
direction. It has a p-type and an n-type semiconductor joined together forming a P-N
junction. The terminal connected to the p-type material is called the anode, and the one
connected to the n-type is the cathode.
When the diode is forward biased, it allows current to flow once the applied voltage exceeds
a threshold (typically 0.7V for silicon). When reverse biased, only a very small leakage
current flows until breakdown.
Figure: Diode Symbol
Anode ----|>|---- Cathode
Forward Bias:
In forward bias condition, the positive terminal of the power supply is connected to the
anode of the diode, and the negative terminal is connected to the cathode. This reduces the
barrier potential and allows current to flow.
As voltage increases and reaches around 0.7V, the diode starts conducting significantly. This
voltage is called the cut-in voltage. Beyond this point, current increases exponentially with
voltage.
Reverse Bias:
In reverse bias condition, the positive terminal is connected to the cathode, and the negative
terminal is connected to the anode. This increases the barrier, preventing current flow.
A very small leakage current flows due to minority charge carriers. This remains nearly
constant and is in microamperes. No significant conduction occurs until breakdown voltage
(not tested in this lab).
Circuit Diagram:
• Figure 1: Forward Bias
• Figure 2: Reverse Bias
Procedure:
Forward Bias Mode:
1. Construct the circuit shown in Figure 1 using a 1N4001 silicon diode. (Ensure correct
polarity)
2. Connect the circuit properly.
3. Vary the voltage V in steps of 0.1V.
4. Measure voltage and current using voltmeter and ammeter.
5. Note down the corresponding readings of V and I.
6. Plot the V-I curve for forward bias.
Reverse Bias Mode:
7. Reverse the polarity of the power supply as shown in Figure 2.
8. Vary the voltage V in steps.
9. Measure the current and voltage.
10. Note the values of reverse current.
11. Plot the V-I curve for reverse bias.
Table: Forward & Reverse Current
Forward Voltage (V) Forward Current I Reverse Voltage (V) Reverse Current I
(mA) (mA)
Plotting Curve (Use MS Excel):
• Plot V vs I for Forward Bias (Exponential curve)
• Plot V vs I for Reverse Bias (Almost flat line near zero)
Calculations:
• DC Resistance (Rₒ):
R_D = V / I
• AC Resistance (rₐ):
r_ac = ΔV / ΔI (At I₁ = 2mA, I₂ = 5.4mA)
Results:
• The silicon diode shows exponential increase in current beyond 0.7V.
• Reverse current is very small and constant indicating diode blocking behavior.
• The cut-in voltage was observed around 0.7V.
Discussion:
• Forward bias allowed increasing current after a threshold.
• Reverse bias maintained low current even at higher voltages.
• The experiment verifies standard diode behavior.
Precautions:
Check connections carefully before applying power.
Use correct polarity for diode.
Increase voltage gradually.
Do not exceed diode’s maximum ratings.
Conclusion:
The V-I characteristics of a silicon diode were successfully studied.
It was observed that:
• In forward bias, the diode starts conducting around 0.7V.
• In reverse bias, only a small leakage current flows.
This experiment confirmed the theoretical characteristics of a PN junction diode.
