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D1415 Schemactic | PDF | Bipolar Junction Transistor | Transistor
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D1415 Schemactic

The 2SD1415 is a silicon NPN power transistor in a TO-220Fa package. It has a high DC current gain and low saturation voltage, making it suitable for high power switching applications like hammer drive and pulse motor drive. Key specifications include a collector current of 7A, DC current gain between 1000-15000, and turn-on and fall times of 0.8 and 2.5 microseconds respectively.

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691 views4 pages

D1415 Schemactic

The 2SD1415 is a silicon NPN power transistor in a TO-220Fa package. It has a high DC current gain and low saturation voltage, making it suitable for high power switching applications like hammer drive and pulse motor drive. Key specifications include a collector current of 7A, DC current gain between 1000-15000, and turn-on and fall times of 0.8 and 2.5 microseconds respectively.

Uploaded by

NghiaNguyentrung
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1415

DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low saturation voltage
·Complement to type 2SB1020
·DARLINGTON

APPLICATIONS
·High power switching applications
·Hammer drive,pulse motor drive applications

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-220Fa) and symbol
3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 100 V

VCEO Collector -emitter voltage Open base 100 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 7 A

IB Base current 0.2 A

PC Collector power dissipation TC=25 30 W

Tj Junction temperature 150

Tstg Storage temperature -55~150

Downloaded from: http://www.datasheetcatalog.com/


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1415

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 100 V

VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=6mA 0.9 1.5 V

VCEsat-2 Collector-emitter saturation voltage IC=7A ;IB=14mA 1.2 2.0 V

VBEsat Base-emitter saturation voltage IC=3A ;IB=6mA 1.5 2.5 V

ICBO Collector cut-off current VCB=100V; IE=0 100 µA

IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA

hFE-1 DC current gain IC=3A ; VCE=3V 2000 15000

hFE-2 DC current gain IC=7A ; VCE=3V 1000

Switching times

ton Turn-on time 0.8 µs

IB1=-IB2=6mA
tstg Storage time 3.0 µs
VCC=45V ,RL=15A

tf Fall time 2.5 µs

Downloaded from: http://www.datasheetcatalog.com/


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1415

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)

Downloaded from: http://www.datasheetcatalog.com/


This datasheet has been downloaded from:

www.DatasheetCatalog.com

Datasheets for electronic components.

Downloaded from: http://www.datasheetcatalog.com/

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