ELECTRONIC
DEVICES
AND
CIRCUITS
A MODULAR APPROACH
MODULE 4
SPECIAL DIODES
Objectives:
1. To familiarize the constructions of the different special diodes
2. To analyze the operations of special diodes
3. To identify the applications of special diodes
A.ZENER DIODE
A diode that is designed to operate in the
breakdown region.
It has constant voltage at the breakdown region.
It is first developed by Dr. Carl Zener.
Symbol of Zener Diode
Characteristic Curve
At forward bias, the Zener diode has identical characteristics with an ordinary diode.
At reverse bias, it enables current flow at reverse breakdown potential known as the
Zener Breakdown.
Zener
Breakdown
APPLICATION
Voltage regulator in power supplies
ZENER VOLTAGE REGULATORS
A. Variable Load, Fixed Vi
Formula:
RL(min) = VzRs/(Vi-Vz)
IL (max) = Vz/RL(min)
IL (min) = Is – Iz(max)
RL(max) = Vz/I(min)
Disclaimer: The professor does not own some contents and all pictures of this module. Full credits are given to all sources
especially to the book “Electronic Devices and Circuit Theory” by Robert Boylestad and Louis Nashelsky 1
Ex:
Solve for the range of load current and load resistance such that the zener diode can produce
an output of 20V.
Given
Pzmax= 300mW and Vz=20V
Variable
I
load
Solutions:
Solve for RL (min) : Solve for IL(max):
RL (min) = IL(max) =
RL (min) = IL(max) =
Ans: RL (min) = 666.6667Ω Ans: IL(max) = 30mA
Solve for IL (min): also: Iz(max) =
IL (min) = Is – Iz(max) Iz(max) =
But: Is = Iz(max) = 15mA
Is = so: IL (min) = Is – Iz(max)
Is = 30mA IL (min) = 30mA-15mA
Thus: Ans: IL (min) = 15mA
RL(max) =
RL(max) =
Ans: RL(max) = 1333.3333Ω
B. Variable Vi, Fixed Load
Formula:
Vi (min) = Vz(Rs+ RL)/RL
Vi(max) = (Izmax+I)Rs+ Vz
Disclaimer: The professor does not own some contents and all pictures of this module. Full credits are given to all sources
especially to the book “Electronic Devices and Circuit Theory” by Robert Boylestad and Louis Nashelsky 2
Ex:
Solve for the range of input voltage such that the zener diode can produce an output of 20V.
Given:
Rs
Izmax= 60mA
Vz=20V
220
Vz
Variable
supply
Vi Izmax RL
1.2K
0
Solutions:
Solve for Vi(min): Solve for I:
Vi(min) = I=
Vi(min) = I=
Answer: Vi(min) = 23.6667V I= 16.6667mA
Solve for Vi(max) :
Vi(max) = ( Izmax + I)Rs +Vz
Vi(max) = ( 60mA + 16.6667mA)220 +20
Answer: Vi(max) = 36.8667V
B. TUNNEL DIODE
It is a heavily doped diode with negative resistance region. It has very thin
depletion region for the electron to easily tunnel through it.
It is developed by Dr. Leo Esaki.
It is also called as “ESAKI DIODE”.
Symbol:
Disclaimer: The professor does not own some contents and all pictures of this module. Full credits are given to all sources
especially to the book “Electronic Devices and Circuit Theory” by Robert Boylestad and Louis Nashelsky 3
Characteristic Curve
Note:
The tunnel diode possesses the “negative resistance” region. It is a unique characteristic
wherein a rise in voltage will result to a drop in current. Thus, defying Ohm’s Law.
This unique characteristic enables the tunnel diode to be used in oscillator circuits.
C.SCHOTTKY DIODES
It has a rectifying metal semiconductor junction.
The P-region is substituted by a metallic
component so as to improve its conductivity.
Current flow is not accompanied by hole
movement only electrons.
It is called as “HOT CARRIER DIODE” or
“SURFACE BARRIER DIODE”.
Mostly used in high speed switching circuits.
Construction:
Disclaimer: The professor does not own some contents and all pictures of this module. Full credits are given to all sources
especially to the book “Electronic Devices and Circuit Theory” by Robert Boylestad and Louis Nashelsky 4
D. PIN DIODE
It has an INTRINSIC material in between the p and n
type materials.
The intrinsic material offers impedance at microwave
frequencies controllable by a DC bias.
It is commonly used as a microwave switch.
Construction:
Symbol
E. VARACTOR DIODE
It makes use of the change in capacitance of the reversed biased junction.
The capacitance varies as a function of the applied reverse voltage.
It is also called as VARICAP or EPICAP.
It is mostly used in tuning circuits
Symbol
Construction:
F. LIGHT EMITTING DIODE
It a special diode which will illuminate once forward biased.
Light is produced as the electron and hole recombines and releases energy.
Such process is called as “electroluminescence”
The visible particles of light as emitted from a LED are known to as photons.
The most commonly used compounds as semiconductor material is Gallium
Arsenide Phosphide or simply Gallium Phosphide.
LEDs are usually used in power display indicators, level indicators, status
indicators, street lamps, TVs, and etc.
Disclaimer: The professor does not own some contents and all pictures of this module. Full credits are given to all sources
especially to the book “Electronic Devices and Circuit Theory” by Robert Boylestad and Louis Nashelsky 5
Symbol:
Construction:
Operation:
Once forward biased, the electrons will diffuse through the depletion and recombines
with the holes. This results into a release of light energy (photons) which are then
magnified by the reflector and as aided by the epoxy lens as coating.
LEDs which emits invisible light is known as infrared LEDs and are usually found in
remote control circuits in TV and some sensor applications.
At reverse bias, the LED is OFF.
MULTICOLOR LED
At positive half cycle, the first LED illuminates while the second one is OFF.
At negative half cycle, the second LED illuminates while the first one is OFF.
The third color exists during the transition phase between cycles.
G. PHOTODIODE
It is a semiconductor diode whose resistance
decreases as light intensity striking into its
opening increases.
The increase in reverse current is due to the
increase in the number of free electrons.
It is mostly applied in remote control systems
and sensor systems.
Operations:
As the light intensity hits the PN junction, it will
dislodge the recombined holes and electrons. As
the light intensity increases, more electrons will
become free. Thus, results into more reverse
current.
Disclaimer: The professor does not own some contents and all pictures of this module. Full credits are given to all sources
especially to the book “Electronic Devices and Circuit Theory” by Robert Boylestad and Louis Nashelsky 6
In the absence of light, a small leakage current flows known to as the “dark
current”.
Construction:
The orifice
in the PN
junction
H. LASER DIODE
It is a special diode which emits a coherent and monochromatic light due to
LASING.
LASER stands for Light Amplification with Stimulated Emission of Radiation.
The first laser was the RUBY LASER invented by DR. Theodore Maiman in
1958.
Symbol:
Orifice
Construction:
Operation:
Once forward biased, the holes and electrons recombine at the depletion region. This
collision of carriers will result into the release of energy which in turn induce energy to
the nearby atoms. This process is cascaded to the highest level and is known as
Disclaimer: The professor does not own some contents and all pictures of this module. Full credits are given to all sources
especially to the book “Electronic Devices and Circuit Theory” by Robert Boylestad and Louis Nashelsky 7
“snowball effect” or “avalanche effect”. The energy cannot escape since the rear and
side parts of the diode are made of reflective surfaces. So, the intense beam of light will
burst out through the opening at the depletion region which is known as the “orifice”.
I.STEP RECOVERY DIODE
It is the fastest diode in terms of switching.
In its construction, it has a variable doping
level. It is most heavily doped at the
junction and such is reduced towards the
terminals.
J.POINT CONTACT DIODE
A semiconductor diode having a fine wire whose point is permanent contact with
the surface of a wafer of a semiconductor material.
The fine wire is also called as “ cat whisker”.
Mostly used in microwave application such as signal mixing and detection.
K. THYRECTOR
A silicon diode exhibiting very high resistance up to a certain voltage beyond
which the device switches to a low conducting state.
It is formed by connecting 2 Zener diodes back to back joining the cathodes.
It is used to suppress voltage surges and transients.
Symbol:
L. GUNN DIODE
It is a diode which has a negative
resistance region that depends on a
specific form of quantum mechanical
band structure.
It exhibits Gunn Effect. It consists the
appearance of RF current
oscillations in a DC slab of n-type
gallium arsenide.
It is mostly used as microwave oscillator.
Disclaimer: The professor does not own some contents and all pictures of this module. Full credits are given to all sources
especially to the book “Electronic Devices and Circuit Theory” by Robert Boylestad and Louis Nashelsky 8
